29.045 半导体材料 标准查询与下载

DOD MIL-HDBK-235-1 B-1993 电器及电子设备子系统和系统设计和采购的电磁(辐射)环境考虑

Department of Defense activities have experienced increasingly serious problems of damage and performance degradation to electrical and electronic equipments, subsystems and systems due to inadequate consideration of the intended operational electromag

ELECTROMAGNETIC (RADIATED) ENVIRONMENT CONSIDERATIONS FOR DESIGN AND PROCUREMENT OF ELECTRICAL AND ELECTRONIC EQUIPMENT, SUBSYSTEMS AND SYSTEMS

VDI/VDE 3717 Blatt 10-1993 掩模工程；集成光学掩模

This document is inteded to simplify the cooperation between mask manufacturer and user of integrated optical circuits by providing definitions (based on definitions used in DIN VDE 0888) and specifications.

Mask engineering; masks for integrated optics

DIN 50445:1992 半导体工艺材料检验.用涡流法无接触测定电阻率.均匀掺杂半导体片

The standard defines the test method for the determination of the specific electrical resistivity of homogeneously doped semiconductor wafers.

Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers

ARMY MIL-H-13514 H-1992 45.000 BTU/HR.(H-45) 可携带辐射式空间加热器 [代替使用:军用 MIL-H-0013514 G]

This specification mers 45,000 B'IU/HR, H-45, portable 1.2 Classification.

HEATERS, SPACE, RADIANT TYPE, PORTABLE, 45,000 BTU/HR, (H-45) [Use In Lieu Of: ARMY MIL-H-0013514 G]

DIN 50455-1:1991 半导体工艺材料的检验.表示光致抗蚀剂特性的方法.第1部分:用光学测量法对涂层厚度的测定

The standard defines a method which allows the characterization of photoresists by determining the coating thickness.

Testing of materials for semiconductor technology; methods for characterizing photoresists; determination of coating thickness with optical methods

DIN 50452-2:1991 半导体工艺材料的检验.液体中颗粒分析的试验方法.第2部分:用光学粒子计数器对颗粒的测定

The standard defines the test method for the determination of the concentration of particles in liquids with optical particle counters.

Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters

KS D 0267-1990(2006) 硅 硼的方式分析

Estimation of Boron Content in Silicon

KS D 0264-1989 锗的腐蚀坑密度测量方法

이 규격은 게르마늄 단결정의(111)면 위의 에치 피트 밀도를 측정하는 경우에 대하여 규정

Method of measurement of etch pit density of germanium crystal

KS D 0264-1989(2019) 锗晶体的蚀刻坑密度的测量方法

Method of measurement of etch pit density of germanium crystal

KS D 0265-1989(2019) 通过光电导衰减法测量锗中少数载流子寿命

Measurement of minority carrier life time in germanium by photoconductive decay method

KS D 0266-1989(2019) 通过热电动势法测定锗中的导电类型

Determination of conductivity type in germanium by thermoelectromotive method

KS D 0266-1989 温度电动势法测定锗的导电类型

이 규격은 게르마늄 결정의 전도형을 열기전력법에 의하여 판정하는 방법에 대하여 규정한 것으

Determination of conductivity type in germanium by thermoelectromotive method

KS D 0265-1989 光电导衰减测量法.锗的少数载流子寿命的测量方法

이 규격은 게르마늄 단결정 중의 소수 캐리어의 수명을 광도전 감쇠법으로 측정하는 방법에 대

Measurement of minority carrier life time in germanium by photoconductive decay method

KS D 0260-1989(1994) 具有四点探针的单晶硅片的电阻率测试方法

TESTING METHODS OF RESISTIVITY FOR SINGLE CRYSTAL SILICON WAFERS WITH FOUR-POINT PROBE

SJ 3249.2-1989 半绝缘砷化镓单晶中碳浓度的红外吸收测试方法

本标准规定了半绝缘砷化镓单晶中碳含量的红外吸收测量原理，仪器设备，样品制备，测量步骤，结果计算和精度。 本标准适用于测定半绝缘砷化镓单晶中替位碳含量，其最低检测限为4.0×10^(14)cm^(-3)

Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption

SJ 3244.3-1989 砷化镓、磷化铟单晶晶向的测量方法

本标准规定了砷化镓、磷化铟单晶锭端面及晶片晶向的X射线衍射测量原理、测量步骤、结果计算以及精度。 本标准适用于晶片表面大体平行于(10^(·)以内)某一低密勒指数原子面的单晶片的晶向测定。

Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide

SJ 3243-1989 磷化铟单晶棒及片

本标准规定了液封直拉法(LEC)生长的磷化铟单晶棒、片的牌号命名方法、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本标准适用于制造光电器件、微波器件、集成电路衬底用的液封直拉磷化铟单晶棒、片。

Indium phosphide single-crystal bar and wafers

SJ 3242-1989 砷化镓外延片

本标准规定了砷化镓气相外延片和液相外延片的牌号命名法、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本标准适用于制备场效应晶体管、变容二极管。霍耳器件及耿氏器件用的砷化镓外延片。

Gallium arsenide epitaxy wafers

SJ 3241-1989 砷化镓单晶棒及片

本标准规定了液封直拉法(LEG)和水平横拉法(HB)制备的砷化镓单晶棒、片牌号的命名方法、技术要求、试验方法、检验规则、标志、包装、运输和贮存。 本标准适用于微波器件、光电器件及集成电路衬底等用的液封直拉法和水平横拉法制备的砷化镓单晶棒片。

Gallium arsenide single-crystal bar and wafer

SJ 3249.3-1989 半绝缘砷化镓中铬浓度的红外吸收测试方法

本标准规定了半绝缘砷化镓中铬浓度的红外吸收测量原理、仪器设备、测量步骤、结果计算和精度等。 本标准适用于掺铬水平法生长半绝缘砷化镓中Cr浓度的测定，适于样品厚度2～4mm。不适于铬浓度大于1.5×10^(17)cm^(-3)的试样。

Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorption