31.080.01 半导体器分立件综合 标准查询与下载

KS C IEC 60747-14-10-2022 半导体器件.第14-10部分:半导体传感器.可穿戴葡萄糖传感器的性能评估方法

Semiconductor devices — Part 14-10: Semiconductor sensors — Performance evaluation methods for wearable glucose sensors

EN IEC 60749-37:2022 半导体设备 机械和气候测试方法 第37部分：使用加速度计的板级跌落测试方法

IEC 60749-37:2022 is available as IEC 60749-37:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition: - correction of a previous technical error concerning test conditions; - updates to reflect improvements in technology.

Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

T/CASME 107-2022 耳温枪温度传感器

本文件规定了耳温枪温度传感器的术语和定义、工作环境、技术要求、试验方法、检验规则、标志、包装、运输和贮存。

Temperature sensor of ear thermometer

IEC 61975:2010+AMD1:2016+AMD2:2022 CSV 高压直流（HVDC）装置.系统试验

High-voltage direct current (HVDC) installations - System tests

IEC 61975:2010/AMD2:2022 高压直流（HVDC）装置.系统试验

High-voltage direct current (HVDC) installations - System tests

IEC 60749-37:2022 RLV 半导体器件.机械和气候试验方法.第37部分:使用加速度计的板级跌落试验方法

Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

IEC 60749-37:2022 半导体设备 机械和气候测试方法 第37部分：使用加速度计的板级跌落测试方法

Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

ASTM E431-96(2022) 半导体和相关器件射线照相解释的标准指南

1.1 This guide provides illustrations of radiographs of semiconductors and related devices. Low powered transistors (through the TO-11 case configuration), diodes, low-power rectifiers, power devices, and integrated circuits are illustrated with common assembly features. Particular areas of construction are featured for these devices detailing critical points of design or assembly. 1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.3 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Standard Guide to Interpretation of Radiographs of Semiconductors and Related Devices

BS EN IEC 60749-28:2022 半导体器件 机械和气候测试方法 静电放电(ESD)灵敏度测试 充电设备模型(CDM)设备级

1   Scope This part of IEC 60749 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.

Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Charged device model (CDM). device level

T/CASAS 005-2022 用于硬开关电路的氮化镓高电子迁移率晶体管动态导通电阻测试方法

本文件规定了用于硬开关切换电路的氮化镓（GaN）高电子迁移率晶体管（HEMT）动态导通电阻测试方法。 本文件适用于进行GaN HEMT的生产研发、特性表征、量产测试、可靠性评估及应用评估等工作场景。可应用于以下器件： a)　GaN增强型和耗尽型分立电力电子器件； b)　GaN集成功率电路； c)　以上的晶圆级及封装级产品。

Dynamic on-resistance test method for GaN high electron mobility transistor(HEMT) in hard-switching circuits

BS EN IEC 60749-10:2022 半导体器件 机械和气候测试方法 机械冲击 设备和组件

1   Scope This part of IEC 60749 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.

Semiconductor devices. Mechanical and climatic test methods. Mechanical shock. device and subassembly

T/QDAS 094-2022 二极管GPP沟槽清洗用混合酸配方

本文件规定了二极管GPP沟槽清洗用混合酸的成分、纯度要求、浓度要求、配制比例、混合酸配制和使用要求等。 本文件适用于采用二极管（包括整流二极管、快恢复功率二极管、可控硅、瞬态二极管、半导体放电管等）湿法腐蚀工艺清洗GPP沟槽的混合酸的配制。

Mixed Acid Formula for Diode GPP Groove Cleaning

KS C IEC 60748-2-12-2022 半导体器件 集成电路 第2部分：数字集成电路 第12节：数字集成电路 可编程逻辑器件（PLD）的空白详细规范

Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 12：Digital integrated circuits－Blank detail specification for programmable logic devices(PLDs)

KS C IEC 60748-3-1-2022 半导体器件 集成电路 第3部分：模拟集成电路 第1节：单片集成运算放大器空白详细规范

Semiconductor devices－Integrated circuits－Part 3：Analogue integrated circuits－Section 1：Blank detail specification for monolithic integrated operational amplifiers

KS C IEC 60748-2-4-2022 半导体器件 集成电路 第2部分：数字集成电路 第4部分：互补MOS数字集成电路系列规范 4 000 B和4 000 UB系列

Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 4：Family specification for complementary MOS digital integrated circuits, series 4 000 B and 4 000 UB

KS C IEC 60748-2-3-2022 半导体器件 集成电路 第2部分：数字集成电路 第3节：HCMOS数字集成电路空白详细规范（54/74 HC、54/74 HCT、54/74 HCU系列）

Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 3：Blank detail specification for HCMOS digital integrated circuits(series 54/74 HC, 54/74 HCT, 54/74 HCU)

KS C IEC 60748-2-8-2022 半导体器件 集成电路 第2部分：数字集成电路 第8节：集成电路静态读/写存储器的空白详细规范

Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 8：Blank detail specification for integrated circuits static read/write memories

KS C IEC 60748-3-2022 半导体器件 集成电路第3部分：模拟集成电路

Semiconductor devices－Integrated circuits Part 3：Analogue integrated circuits

KS C 6566-2022 用于检测可燃气体的气体传感器

Gas sensors for detecting flammable gas

KS C IEC 60748-2-6-2022 半导体器件 集成电路 第2部分：数字集成电路第6节：微处理器集成电路空白详细规范

Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits Section 6：Blank detail specification for microprocessor integrated circuits