31.080.01 半导体器分立件综合 标准查询与下载
共找到 1415 条与 半导体器分立件综合 相关的标准，共 95 页
Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits Section 6：Blank detail specification for microprocessor integrated circuits
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- 31.080.01
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- 发布
- 20220720
- 实施
- 20220720
Semiconductor devices－Integrated circuits Part 2：Digital integrated circuits Section 5－Blank detail specification for complementary MOS digital integrated circuits(series 4 000B and 4 000UB)
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- 31.080.01
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- 发布
- 20220720
- 实施
- 20220720
Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 12：Digital integrated circuits－Blank detail specification for programmable logic devices(PLDs)
- ICS
- 31.080.01
- CCS
- 发布
- 20220720
- 实施
- 20220720
Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 4：Family specification for complementary MOS digital integrated circuits, series 4 000 B and 4 000 UB
- ICS
- 31.080.01
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- 发布
- 20220720
- 实施
- 20220720
Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 8：Blank detail specification for integrated circuits static read/write memories
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- 31.080.01
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- 发布
- 20220720
- 实施
- 20220720
碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）因具有禁带宽度宽、临界击穿电场强、耐高温性能好等优点，逐渐在雷达探测、医疗通讯、交通运输以及新能源等领域广泛应用。结壳热阻作为表征热量在导热路径传输能力的重要参数，是直接反映器件热性能的关键技术指标之一，可以为器件的热设计与优化改进提供参考。因而，准确的热阻测试对于SiC MOSFET的鉴定、评价及其应用具有重要意义。
Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
- ICS
- 31.080.01
- CCS
- C397
- 发布
- 2022-07-18
- 实施
- 2022-09-08
碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)具有阻断电压高、工作频率高、耐高温能力强、通态电阻低和开关损耗小等特点，广泛应用于高频、高压功率系统中。随着电力电子技术的不断发展，越来越多的领域如航天、航空、石油勘探、核能、通信等，迫切需要能够在髙温、高频等极端环境下工作的电子器件。SiC MOSFET的功率循环试验是使器件重复承受通电升温和关断降温循环，以加速器件芯片与安装表面之间所有的键合和界面退化。器件能否能承受规定应力条件下的功率循环次数是评估器件实际应用可靠性的重要手段。 由于SiO2与SiC界面缺陷的俘获和释放机制，传统的Si MOSFET的功率循环试验方法会由于SiC MOSFET器件的阈值电压V_GS(th) 漂移导致结温等监测参数出现偏差，从而影响功率循环试验的准确性，本文件给出了适用于SiC MOSFET器件的功率循环试验方法。
Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
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- 31.080.01
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- C397
- 发布
- 2022-07-18
- 实施
- 2022-09-08
根据电子信息生产制造企业对混合集成电路装调工技能水平的最新要求，本规范将混合集成电路装调工技能水平划分为初级、中级、高级、技师、高级技师五个等级，由低到高对不同等级混合集成电路装调工的工作内容、知识要点和技能要求进行了明确规定。本规范适用于混合集成电路装调工职业技能等级的考核与评估，对相关企业在混合集成电路装调工的聘用、职业培训和技能提升等方面具有参考价值。
Evaluation standard for professional skill level of Hybrid integrated circuits assembling and commissioning worker
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- 31.080.01
- CCS
- C3990
- 发布
- 2022-07-14
- 实施
- 2022-08-17
IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification. This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition: covers both unattached components and components attached to printed wiring boards; tolerance limits modified for peak acceleration and pulse duration; mathematical formulae added for velocity change and equivalent drop height.
Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - Device and subassembly
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- 31.080.01
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- 发布
- 2022-06-10
- 实施
- 2022-09-01 (7)
Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - device and subassembly
- ICS
- 31.080.01
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- 发布
- 2022-04-27
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IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition: - a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages; - changes to clarify cleaning of devices and testers.
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
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- 31.080.01
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- 发布
- 2022-04-08
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- 2022-07-05 (7)
What is BS EN IEC 60749-39 - Mechanical and climatic test methods for organic materials about? BS EN IEC 60749-39 semiconductor devices and mechanical and climatic test methods with a focus on measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components. BS EN IEC 60749-39 is the 39 th part of the multi-series on semiconductor devices that details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. Who is BS EN IEC 60749-39 - Mechanical and climatic test methods for organic materials for ? BS EN IEC 60749-39 on mechanical and climatic test methods for organic materials is useful for: Organic mater...
Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
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- 31.080.01
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- 发布
- 2022-03-31
- 实施
- 2022-03-31
BS EN 60749-34-1. Semiconductor devices. Mechanical and climatic test methods - Part 34-1. Power cycling test for power semiconductor module
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- 31.080.01
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- 发布
- 2022-03-30
- 实施
- 2022-03-30
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
- ICS
- 31.080.01
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- 发布
- 2022-03-01
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Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
- ICS
- 31.080.01
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- 发布
- 2022-03-01
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BS EN 63378-3. Thermal standardization on semiconductor packages - Part 3. Thermal circuit simulation models of semiconductor packages for transient analysis
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- 31.080.01
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- 发布
- 2022-01-24
- 实施
- 2022-01-24
IEC 60749-39:2021 is available as IEC 60749-39:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-39:2021 details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. This edition includes the following significant technical changes with respect to the previous edition: - updated procedure for "dry weight" determination.
Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
- ICS
- 31.080.01
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- 发布
- 2022-01-21
- 实施
- 2022-04-03 (7)
Semiconductor devices — Mechanical and climatic test methods — Part 32: Flammability of plastic-encapsulated devices(externally induced)
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- 31.080.01
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- 发布
- 2021-12-29
- 实施
Semiconductor devices — Mechanical and climatic test methods — Part 32: Flammability of plastic-encapsulated devices(externally induced)
- ICS
- 31.080.01
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- 发布
- 2021-12-29
- 实施
Semiconductor devices — Mechanical and climatic test methods — Part 18: Ionizing radiation(total dose)
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- 31.080.01
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- 发布
- 2021-12-29
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