81.060.10 原料 标准查询与下载



共找到 320 条与 原料 相关的标准,共 22

Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV).

ICS
81.060.10
CCS
Q30
发布
2011-04-01
实施
2011-04-09

This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight, this test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1000 mg/kg, after evaluation also from 0,001 mg/kg to about 5000 mg/kg.

Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v

ICS
81.060.10
CCS
Q30
发布
2011-04
实施

This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powder- and grain-shaped silicon carbide of ceramic raw and basic materials. This application can also be extended to other metallic elements and other similar non-metallic powder- and grain-shaped materials such as carbides, nitrides, graphite, carbon blacks, cokes, carbon, as well as a number of further oxidic raw and basic materials after appropriate testing. This testing procedure is applicable to mass fractions of the impurities mentioned above from approximately 1 mg/kg up to approximately 3000 mg/kg, after verification. In some cases it may be possible to extend the range up to 5000 mg/kg depending on element, wavelength, arc parameter, and sample weight.

Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation; German version EN 15979:2011

ICS
81.060.10
CCS
Q30
发布
2011-04
实施

This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight, this test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1 000 mg/kg, after evaluation also from 0,001 mg/kg to about 5 000 mg/kg.NOTE 1 Generally for optical emission spectrometry using inductively coupled plasma (ICP OES) and electrothermal vaporisation (ETV) there is a linear working range of up to four orders of magnitude. This range can be expanded for t

Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

ICS
81.060.10
CCS
发布
2011-03-12
实施
2011-03-12

This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powder and grain-shaped silicon carbide of ceramic raw and basic materials. This application can also be extended to other metallic elements and other similar non-metallic powder and grain-shaped materials such as carbides, nitrides, graphite, carbon blacks, cokes, carbon, as well as a number of further oxidic raw and basic materials after appropriate testing. NOTE There are positive interferences for materials such as e.g. graphite, B4C, BN, WC and several refractory metal oxides.This testing procedure is applicabl

Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation

ICS
81.060.10
CCS
发布
2011-03-12
实施
2011-03-12

Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

ICS
81.060.10
CCS
Q30
发布
2011-02-28
实施
2011-02-28

Testing of ceramic raw and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation

ICS
81.060.10
CCS
Q30
发布
2011-02-28
实施
2011-02-28

This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight,This test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1000 mg/kg, after evaluation also from 0,001 mg/kg to about 5000 mg/kg. NOTE 1 Generally for optical emission spectrometry using inductively coupled plasma (ICP OES) and electrothermal vaporisation (ETV) there is a linear working range of up to four orders of magnitude.This range can be expanded for the respective elements by variation of the weight or by choosing lines with different sensitivity. After adequate verification, the standard is also applicable to further metallic elements (excepting Rb and Cs) and some non-metallic contaminations (like P and S) and other allied non-metallic powdered or granular materials like carbides, nitrides, graphite, soot, coke, coal, and some other oxidic materials. NOTE 2 There is positive experience with materials like for example graphite, B4C, Si3N4, BN and several metal oxides as well as with the determination of P and S in some of these materials.

Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

ICS
81.060.10
CCS
发布
2011-01-01
实施

This European Standard describes the method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powder- and grain-shaped silicon carbide of ceramic raw and basic materials.This application can also be extended to other metallic elements and other similar non-metallic powder- and grain-shaped materials such as carbides, nitrides, graphite, carbon blacks, cokes, carbon, as well as a number of further oxidic raw and basic materials after appropriate testing. NOTE There are positive interferences for materials such as e. g. graphite, B4C, BN, WC and several refractory metal oxides.This testing procedure is applicable to mass fractions of the impurities mentioned above from approximately 1 mg/kg up to approximately 3000 mg/kg, after verification. In some cases it may be possible to extend the range up to 5000 mg/kg depending on element, wavelength, arc parameter, and sample weight.

Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation

ICS
81.060.10
CCS
发布
2011-01-01
实施

1.1 This test method covers the determination of the rate at which a layer of clay-water paste is formed from a clay-water slip under pressure filtration. The filtration rate is directly related to such whiteware operations as filter pressing, slip casting, and drying of ware in which water permeability through a clay-water paste is the controlling mechanism. 1.2 A straight-line relationship exists between the time of filter pressing and the square of the thickness of the paste layer. The filtration rate is directly related to the filter press pressure and the void fraction of the paste layer, and is inversely related to the square of the clay surface area, the ratio of solids to liquid in the slip, and the viscosity of water at the testing temperature. 1.3 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Filtration Rate of Ceramic Whiteware Clays

ICS
81.060.10
CCS
Q30
发布
2011
实施

이 표준은 도자기 형재용 석고의 성능을 결정하는 물리 시험에 대하여 규정한다.

Method of physical test for plaster of paris mold for pottery

ICS
81.060.10
CCS
Q62
发布
2010-10-26
实施
2010-10-26

이 표준은 도자기 제조에 사용하는 형재용 석고(이하 형재용 석고라 한다.)에 대하여 규정한

Plaster of paris mold for pottery

ICS
81.060.10
CCS
Q62
发布
2010-10-26
实施
2010-10-26

本标准规定了用压缩法测定陶瓷泥料可塑性指数的原理与方法。 本标准适用于含工作水分的陶瓷泥料。

Standard test method for plasticity index of ceramic clay

ICS
81.060.10
CCS
Y24
发布
2010-04-22
实施
2010-10-01

Standard Test Method for Drying and Firing Shrinkages of Ceramic Whiteware Clays

ICS
81.060.10
CCS
发布
2010
实施

Standard Guide for Wet Sieve Analysis of Ceramic Whiteware Clays

ICS
81.060.10
CCS
发布
2010
实施

Standard Test Methods for Liquid Limit, Plastic Limit, and Plasticity Index of Soils

ICS
81.060.10
CCS
发布
2010
实施

Standart Test Methods for Flexural Properties of Ceramic Whiteware Materials1

ICS
81.060.10
CCS
发布
2010
实施

Clay and feldspar, Chemical test wet method

ICS
81.060.10
CCS
发布
2010
实施

Standard Test Methods for Pyrometric Cone Equivalent (PCE) of Fireclay and High Alumina Refractory Materials

ICS
81.060.10
CCS
发布
2010
实施

本标准规定了建筑卫生陶瓷用解胶剂的术语和定义、产品分类、要求、试验方法、检验规则、标志、包装、运输及贮存。 本标准适用于建筑卫生陶瓷用解胶剂。

Additives for building and sanitary ceramic:dispergators

ICS
81.060.10
CCS
Q31
发布
2009-12-04
实施
2010-06-01



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