H82 元素半导体材料 标准查询与下载

SJ/T 11494-2015 硅单晶中III-V族杂质的光致发光测试方法

本标准规定了硅单晶中硼、磷杂质的光致发光测试方法。本标准适用于低位错密度(< 500个/cm)硅单晶中导电性杂质硼、磷含量的测定,同时也适用于检测硅单晶中含量为1×10 at • cm~5×10 at·cm的各种电活性杂质。

Test methods for photoluminescence analysis of single crystal silicon for III-V impurities

DIN 50451-3:2014 半导体工艺用材料测试. 液体中痕量元素测定. 第3部分: 使用电感耦合等离子体质谱法 (ICP-MS) 测定高纯度硝酸中的31种元素

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS

YS/T 989-2014 锗粒

本标准规定了锗粒的要求、检验方法、检验规则及标志、包装、运输、贮存、质量证明书和订货单(或合同)内容。本标准适用于以锗单晶或区熔锗锭为原料,经机械加工而制得的锗粒,主要为工艺品和健身护品提供镶件。

Germanium grain

DB13/T 1828-2013 太阳能级类单晶硅片

本标准规定了太阳能级类单晶硅片的分类、要求、检验方法、检验规则、标志、包装、运输和储存。 本标准适用于太阳能级类单晶硅片。

Solar grade monocrystalline silicon wafer

DB13/T 1632-2012 太阳能级多晶硅块

本标准规定了太阳能级多晶硅块的产品分类、要求、试验方法、检验规则、包装、标志、运输和贮存。本标准适用于太阳能级P型多晶硅块。

Solar Grade Polysilicon Block

DB36/ 652-2012 太阳能级多晶硅单位产品能源消耗限额

规定了太阳能级多晶硅(为符合GB/T 25074 产品质量要求的产品,以下简称多晶硅)单位产品能源消耗(以下简称能耗)限额的技术要求、统计范围、计算方法、计算范围

The norm of energy consumption per unit product of polysilicon

KS D 0078-2008 硅晶体中混杂物浓度测定方法.光致发光分析测定法

이 표준은 광발광 분광법에 의한 실리콘 단결정 및 다결정 실리콘 불순물 농도의 측정 방법에

Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

DIN 50451-3:2003 半导体工艺用材料测试.液体中痕量元素测定.第3部分:用电感耦合等离子体质谱法测定硝酸中铝(AL)、钴(Co)、铜(Cu)、钠(Na)、镍(Ni)和锌(Zn)的含量

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Aluminium (Al), cobalt (Co), copper (Cu), sodium (Na), nickel (Ni) and zinc (Zn) in nitric acid by ICP-MS

DIN 50451-1:2003 半导体工艺材料检验.液体中痕量元素测定.用原子吸收光谱测定法测定硝酸溶剂中银、金、钙、铜、铁、钾和钠的含量

The document specifies a method for testing nitric acid for the relevant metal traces of silver, gold, copper, iron, potassium and sodium in trace quantities, for which the method of atomic absorption spectroscopy (AAS) with electrothermic atomizing is used. The range of application covers trace element mass fractions from 0,1 ng/g to 50 ng/g.

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 1: Silver (Ag), gold (Au), calcium (Ca), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS

DIN 50451-2:2003 半导体工艺材料测试.液体中痕量元素测定.第2部分:用等离子感应发射分光光度测定法测定氢氟酸中钴(Co)、铬(Cr)、铜(Ca)、铁(Fe)和镍(Ni)的含量

The document specifies a method for testing hydrofluoric acid for the metal traces of cobalt (Co), chromium (Cr), copper (Cu), iron (Fe), and nickel (Ni) relevant to semiconductor technology. Emission spectroscopy with plasma excitation (for example, inductively coupled plasma (ICP) or direct current plasma (DCP)) is used for the determination. The range of application covers trace element mass fractions from 1 ng/g to 1000 ng/g.#,,#

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2: Calcium (Ca), cobalt (Co), chromium (Cr), copper (Cu), Iron (Fe), nickel (Ni) and zinc (Zn) in hydrofluoric acid with plasma-induced emission spectros

ASTM F534-02 硅片弯曲标准试验方法

1.1 This test method covers determination of the average amount of bow of nominally circular silicon wafers, polished or unpolished, in the free (non-clamped) condition. 1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1. 1.3 This test method can also be applied to circular wafers of other semiconducting materials, such as gallium arsenide, or electronic substrate materials, such as sapphire or gadolinium gallium garnet, that have a diameter of 25 mm or greater, a thickness of 0.18 mm or greater, and a ratio of diameter to thickness up to 250. Wafers to be tested may have one or more fiducial flats provided they are located in such a way that the slice can be centered on the support pedestals (see 7.1.2) without falling off. 1.4 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Bow of Silicon Wafers

DIN 50441-5:2001 半导体技术试验.半导体片几何尺寸测定.第5部分:形状和平整度偏差术语

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation

DIN 50453-3:2001 半导体技术试验.蚀刻混合剂浸蚀率测定.第3部分:铝.测重法

The document specifies the test method for the determination of etch rates of etch mixtures at alumnium substrates. It supplements the chemical analysis which is more expensive and does not give information on etch characteristics of the etch mixtures.

Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 3: Aluminium, gravimetric method

ASTM F1392-00 用带汞探针的容量-电压测量法测定硅晶片中净载流子密度分布的标准试验方法

1.1 This test method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 X 10 13 to about 8 X 10 16 carriers/cm (resistivity range from about 0.1 to about 100 [omega][dot]cm in -type wafers and from about 0.24 to about 330 [omega][dot]cm in -type wafers). 1.2 This test method requires the formation of a Schottky barrier diode with a mercury probe contact to an epitaxial or polished wafer surface. Chemical treatment of the silicon surface may be required to produce a reliable Schottky barrier diode (1). The surface treatment chemistries are different for - and -type wafers. This test method is sometimes considered destructive due to the possibility of contamination from the Schottky contact formed on the wafer surface; however, repetitive measurements may be made on the same test specimen. 1.3 This test method may be applied to epitaxial layers on the same or opposite conductivity type substrate. This test method includes descriptions of fixtures for measuring substrates with or without an insulating backseal layer. 1.4 The depth of the region that can be profiled depends on the doping level in the test specimen. Based on data reported by Severin (1) and Grove (2), Fig. 1 shows the relationships between depletion depth, dopant density, and applied voltage together with the breakdown voltage of a mercury silicon contact. The test specimen can be profiled from approximately the depletion depth corresponding to an applied voltage of 1 V to the depletion depth corresponding to the maximum applied voltage (200 V or about 80% of the breakdown voltage, whichever is lower). To be measured by this test method, a layer must be thicker than the depletion depth corresponding to an applied voltage of 2 V. 1.5 This test method is intended for rapid carrier density determination when extended sample preparation time or high temperature processing of the wafer is not practical. Note 1-Test Method F419 is an alternative method for determining net carrier density profiles in silicon wafers from capacitance-voltage measurements. This test method requires the use of one of the following structures: ( ) a gated or ungated p-n junction diode fabricated using either planar or mesa technology or ( ) an evaporated metal Schottky diode. 1.6 This test method provides for determining the effective area of the mercury probe contact using polished bulk reference wafers that have been measured for resistivity at 23176C in accordance with Test Method F84 (Note 2). This test method also includes procedures for calibration of the apparatus for measuring both capacitance and voltage. Note 2-An alternative method of determining the effective area of the mercury probe contact that involves the use of reference wafers whose net carrier density has been measured using fabricated mesa or planar p-n junction diodes or evaporated Schottky diodes is not included in this test method but may be used if agreed upon by the parties to the test. 1.7 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in 7.1 (Note 4), 7.2, 7.10.3 (Note 8), 8.2, 11.5.1 (Note 18), 11.6.3, and 11.6.5.

Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe

DIN 50456-3:1999 半导体工艺技术用材料的试验.电子元件模塑化合物材料的特性表示法.第3部分:阳离子杂质的测定

The document defines a method for the determination of Na, K and CA in moulding compounds for electronic components by analysis of an aqueous extract of the epoxy resin moulding compound by means of the pressure cooker test according to DIN 50456-2.#,,#

Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 3: Determination of cationic impurities

DIN 50441-4:1999 半导体工艺用材料的试验.半导体圆片几何尺寸的测定.第4部分:圆片直径,直径变化量,扁片直径,扁片长度和扁片厚度

The methods according to the document cover the determination of the slice diameter, diameter variation, flat diameter, flat length and flat depth. They are nondestructive regarding mechanical damages.#,,#

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth

DIN 50441-2:1998 半导体工艺材料的试验.半导体芯片几何尺寸的测量.第2部分:棱角剖面的试验

The document specifies four test methods for determination of the edge profile of semiconductor wafers. Three methods base on optical projection, the fourth method specifies the determination of the profile length by a measuring microscope.#,,#

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile

DIN 50440:1998 半导体工艺材料的试验.硅单晶中载流子寿命的测量.用光电导法在微小喷射时测量复合载流子寿命

The method according to the document covers the determination of the recombination carrier lifetime at low injection by the photo conductive decay method.

Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method

SJ 20719-1998 碲镉汞晶体X值的X-射线荧光法测定方法

本标准规定了用X-射线荧光法测定碲镉汞晶片的组分X值。 本标准适用于X值在0.100～0.350mo1范围内的碲镉汞晶片组分X值定量测定。

Method of determination X value for mercury cadmium telluride for use in X-ray fluorimetry

SJ 20718-1998 碲镉汞晶体中痕量元素的测定方法

本标准规定了定量测定碲镉汞晶体中痕量元素钠、银、铜的方法。 本标准适用于无火焰原子吸收法测定碲镉汞晶体中痕量元素钠、银、铜。

Method of determination trace elements in mercury cadmium telluride crystal