31.080.01;31.220.01 标准查询与下载
共找到 37 条与 相关的标准，共 3 页
This part of IEC 62047 specifies a method for assessing the bond strength of glass frit bonded structures using micro-chevron-tests (MCT). It describes suitable sample geometry and provides guidance for the design of deviating sample geometries. The micro-chevron-test is an experimental method to determine the fracture toughness KIC of brittle materials or bond interfaces using specifically designed test chips (micro-chevronsamples) under defined load conditions (crack opening mode I). Owing to its high precision and low variance@ it is suitable for analysing the influence of different process parameters on bond strength as well as for quality assurance. The exemplary setup of the micro-chevron-test is given in Figure 1. These operational instructions are applicable for symmetrically glass frit bonded siliconsilicon- stacks@ i.e. the joint upper and lower chip of the chevron sample exhibit identical thickness and mechanical properties. The method is suitable for test samples@ which are either produced directly from individual chips in corresponding dimensions@ or for integrated samples@ which have been singled out from processed wafers using suitable methods. This document determines preferential dimensions for samples as well as parameters for the test conditions. Deviating geometries can potentially influence the viability of the tests as well as the comparability of the results. On that score@ all parameters are determined and documented accurately.
Semiconductor devices - Micro-electromechanical devices Part 27: Bond strength test for glass frit bonded structures using micro-chevron- tests (MCT)
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2017-01
- 实施
- 2017-01-24
Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (IEC 62047-21:2014); German version EN 62047-21:2014
- ICS
- 31.080.01;31.220.01
- CCS
- 发布
- 2015-04
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates (IEC 62047-22:2014); German version EN 62047-22:2014
- ICS
- 31.080.01;31.220.01
- CCS
- 发布
- 2015-04
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013); German version EN 62047-11:2013
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2014-04
- 实施
- 2014-04-01
Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2014-04
- 实施
- 2014-04-01
Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2013-10-31
- 实施
- 2013-10-31
Semiconductor devices. Micro-electromechanical devices. Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2013-10-31
- 实施
- 2013-10-31
Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
- ICS
- 31.080.01;31.220.01
- CCS
- 发布
- 2013-01-31
- 实施
- 2013-01-31
Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2013-01-31
- 实施
- 2013-01-31
Semiconductor devices - Micro-electromechanical devices - Part 13: bend- and shear- type test methods of measuring adhesive strenght for MEMS structures
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-12-01
- 实施
- 2012-12-14
Semiconductor devices - Micro-electromechanical devices - Part 10: micro-pillar compression test for MEMS materials
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-12-01
- 实施
- 2012-12-14
Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012); German version EN 62047-14:2012
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-10-01
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 13: Bend- and shear- type test methods of measuring adhesive strength for MEMS structures (IEC 62047-13:2012); German version EN 62047-13:2012
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-10-01
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 12 : bending fatigue testing method of thin film materials using resonant vibration of MEMS structures.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-07-01
- 实施
- 2012-07-06
Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-06
- 实施
Semiconductor devices. Micro-electromechanical devices. Forming limit measuring method of metallic film materials
- ICS
- 31.080.01;31.220.01
- CCS
- K24
- 发布
- 2012-05-31
- 实施
- 2012-05-31
Semiconductor devices. Micro-electromechanical devices. Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-05-31
- 实施
- 2012-05-31
Semiconductor devices - Micro-electromechanical devices - Part 5 : RF MEMS switches.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-05-01
- 实施
- 2012-05-04
Semiconductor devices - Micro-electromechanical devices - Part 9 : wafer to wafer bonding strength measurement for MEMS.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-04-01
- 实施
- 2012-04-28
This part of IEC 62047 describes terminology@ definition@ symbols@ test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various structures@ contacts (d.c. contact and capacitive contact)@ configurations (series and shunt)@ switching networks (SPST@ SPDT@ DPDT@ etc.)@ and actuation mechanism such as electrostatic@ electro-thermal@ electromagnetic@ piezoelectric@ etc. The RF MEMS switches are promising devices in advanced mobile phones with multi-band/mode operation@ smart radar systems@ reconfigurable RF devices and systems@ SDR (Software Defined Radio) phones@ test equipments@ tunable devices and systems@ satellite@ etc.
Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches; Corrigendum 1
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-03
- 实施
- 2012-04-29
