29.045 半导体材料 标准查询与下载

DIN 50449-2:1998 半导体工艺材料试验.通过红外线吸收测定半导体中杂质含量.第2部分:砷化镓中的硼

The method specified in this document covers the determination of the boron content in gallium arsenide by infrared absorption. It is used for semiisolating single-crystal gallium arsenide with a resistivity greater than 10 cm6.

Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide

ARMY MIL-PRF-49293 A-1997 AN/PDR-75型辐射仪

This performance specification covers the Radiac Set, ANRDR-75.

RADIAC SET, AN/PDR-75

DIN 50449-1:1997 半导体工艺用材料的检验.通过红外线吸收测定Ⅲ-Ⅴ-连接半导体杂质含量.第1部分:砷化镓中的碳素

Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide

ASTM F28-91(1997) 硅和锗体内少数载流子寿命测定光电导衰减法

1.1 These test methods cover the measurement of minority carrier lifetime appropriate to carrier recombination processes in bulk specimens of extrinsic single-crystal germanium or silicon. 1.2 These test methods are based on the measurement of the decay of the specimen conductivity after generation of carriers with a light pulse. The following two test methods are described: 1.2.1 Test Method A—Pulsed Light Method, that is suitable for both silicon and germination.2 1.2.2 Test Method B—Chopped Light Method, that is specific to silicon specimens with resistivity $1 V·cm.3 1.3 Both test methods are nondestructive in the sense that the specimens can be used repeatedly to carry out the measurement, but these methods require special bar-shaped test specimens of size (see Table 1) and surface condition (lapped) that would be generally unsuitable for other applications. 1.4 The shortest measurable lifetime values are determined by the turn-off characteristics of the light source while the longest values are determined primarily by the size of the test specimen (see Table 2). NOTE 1—Minority carrier lifetime may also be deduced from the diffusion length as measured by the surface photovoltage (SPV) method made in accordance with Test Methods F 391. The minority carrier lifetime is the square of the diffusion length divided by the minority carrier diffusion constant which can be calculated from the drift mobility. SPV measurements are sensitive primarily to the minority carriers; the contribution from majority carriers is minimized by the use of a surface depletion region. As a result lifetimes measured by the SPV method are often shorter than lifetimes measured by the photoconductivity decay (PCD) method because the photoconductivity can contain contributions from majority as well as minority carriers. In the absence of carrier trapping, both the SPV and PCD methods should yield the same values of lifetime (1)4 providing that the correct values of absorption coefficient are used for the SPV measurements and that the contributions from surface recombination are properly accounted for in the PCD measurement. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

Standard Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay

ARMY MIL-R-55403 NOTICE 2-1997 OR-114()/T型模拟辐射接收组

This commercial item description covers brown kraft paper used for general wrapping applications.

RECEIVER GROUP, SIMULATED RADIAC, OR-114( )/T

ARMY MIL-R-55615 B NOTICE 1-1997 IM-174()/PD型核辐射剂量计

This commercial item description covers brown kraft paper used for general wrapping applications.

RADIACMETER IM-174( )/PD

ARMY MIL-R-55350 A NOTICE 1-1997 AN/UDM-2()型辐射校准器

This notice should be filed in fiont of MIL-R-55350A, dated 9 June 1981. MIL-R-5535OA is inactive for new design and is no longer used.

RADIAC CALIBRATOR AN/UDM-2( )

DIN 50441-1:1996 半导体工艺材料试验.半导体片几何尺寸测量.第1部分:厚度和厚度变化

The method covers determination of the thickness of circular or D-shaped semiconductor wafers with any surface quality by using both contactless and contacting instruments for thickness measurement.

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation

ASTM F391-96 用稳态表面光电压测量法测定非本征半导体中少数载流子扩散长度的标准试验方法

1.1 These test methods cover the measurement of minority carrier diffusion lengths in specimens of extrinsic single-crystal semiconducting materials or in homoepitaxial layers of known resistivity deposited on more heavily doped substrates of the same type, provided that the thickness of the specimen or layer is greater than four times the diffusion length. 1.2 These test methods are based on the measurement of surface photovoltage (SPV) as a function of energy (wavelength) of the incident illumination. The following two test methods are described: 1.2.1 Test Method A -Constant magnitude surface photovoltage (CMSPV) method. 1.2.2 Test Method B -Linear photovoltage, constant photon flux (LPVCPF) method. 1.3 Both test methods are nondestructive. 1.4 The limits of applicability with respect to specimen material, resistivity, and carrier lifetime have not been determined; however, measurements have been made on 0.1 to 50 [omega][dot]cm - and -type silicon specimens with carrier lifetimes as short as 2 ns. 1.5 These test methods were developed for use on single crystal specimens of silicon. They may also be used to measure an effective diffusion length in specimens of other semiconductors such as gallium arsenide (with suitable adjustment of the wavelength (energy) range of the illumination and specimen preparation procedures) and an average effective diffusion length in specimens of polysilicon in which the grain boundaries are normal to the surface. 1.6 These test methods also have been applied to the determination of the width of the denuded zone in silicon wafers. 1.7 These test methods measure diffusion lengths at room temperature (22176C) only. Lifetime and diffusion length are a function of temperature. 1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage

DIN 50452-1:1995 半导体工艺用材料的检验.液体中粒子分析的试验方法.第1部分:粒子的显微镜测定

This method cover the determination of the concentration of particulate matter contamination from liquids isolated on a membrane filter by microscopic counting. The scope is limited to sizing particles of 5 ?and more.

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles

ARMY MIL-A-51356 A NOTICE 1-1995 ABC-M5A2辐射尘面积预估

This commercial item description covers brown kraft paper used for general wrapping applications.

AREA PREDICTOR, RADIOLOGICAL FALLOUT, ABC-M5A2

DIN 50446:1995 半导体工艺材料的检验.硅晶体外延层缺陷种类和缺陷密度的测定

The document specifies methods for determination of defect types, especially crystal defects, and defect densities of silicon epitaxial layers with a thickness of 0,5 ?#,,#

Testing of materials for semiconductor technology - Determination of defect types and defect densities of silicon epitaxial layers

DIN 50438-1:1995 半导体工艺材料检验.用红外吸收法测量硅的杂质含量.第1部分:氧

This document specifies two methods for the non-destructive determination of the oxygen content in silicon by infrared absorption.

Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen

SJ/T 10627-1995 通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法

本标准适用于室温电阻率大于0．1Ω．cm的N型或P型直拉硅晶片，其热循环可为单一温度或双温度。

Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction

SJ/T 10625-1995 锗单晶体中间隙氧含量的红外吸收测定方法

本标准适用于锗单晶中间隙氧含量的测定，测量范围为10ppba至间隙氧在锗单晶中的最大固溶度。

Determination method for interstitial atomic oxygen content of germanium by infrared abaorption

DIN 50456-2:1995 半导体工艺材料的试验.电子元件用模塑化合物的特性表示法.第2部分:用压力萃取法测定电离子杂质

Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 2: Determination of ionic impurities using pressure cooker test

DIN 50447:1995 半导体工艺材料的检验.用涡流法无接点测量半导体层的表面电阻

Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method

DIN 50454-2:1994 半导体工艺材料的检验.Ⅲ-Ⅴ化合物半导体单晶错位腐蚀坑密度的测定.第2部分:铟磷化物

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide

DIN 50454-3:1994 半导体工艺材料的检验.Ⅲ-Ⅴ化合物半导体单晶错位腐蚀坑密度的测定.第3部分:镓磷化物

The document specifies a test method for determination of the dislocation etch pits densities 100000 cm in monocrystals of gallium phosphide. The method is independent on the electrical resistivity and the conductivity type of the material.

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide

SJ/T 10482-1994 半导体中深能级的瞬态电容.测试方法

本标准规定了用瞬态电容技术中的深能级瞬态谱(DLTS)法测量半导体材料中深能级的测试方法。 本标准适用于测量硅、砷化镓等半导体材料中杂质、缺陷在半导体禁带中产生的深能级。由此法可得到深能级的激活能、浓度、指数前因子A等参数。本标准适用于产生指数形式电容瞬态有关的深能级。

Test method for characterizing semiconductor deep levels by transient capacitance techniques