L40 半导体分立器件综合 标准查询与下载

BS EN IEC 60191-1:2018 半导体器件的机械标准.分立器件外形图准备的一般规则

Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of discrete devices

BS EN IEC 60749-12:2018 半导体器件.机械和气候试验方法.振动,可变频率

Semiconductor devices. Mechanical and climatic test methods. Vibration, variable frequency

IEC 60191-4:2013/AMD1:2018 半导体器件的机械标准化.第4部分:半导体器件封装外形图类型的划分和编号系统.修改件1

Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 1

IEC 60191-4:2018 半导体器件的机械标准化.第4部分:半导体器件封装外形图类型的划分和编号系统

This part of IEC 60191 specifies a method for the designation of package outlines and for the classification of forms of package outlines for semiconductor devices and a systematic method for generating universal descriptive designators for semiconductor device packages. The descriptive designator provides a useful communication tool but has no implied control for assuring package interchangeability.

Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages

JIS C 6790 ERRATUM 1:2017 勘误

ERRATUM

ISO/TS 13278:2017 纳米技术.电感耦合等离子体质谱法测定碳纳米管样本中元素状态杂质

Nanotechnologies - Determination of elemental impurities in samples of carbon nanotubes using inductively coupled plasma mass spectrometry

BS EN 60749-5:2017 半导体器件 机械和气候测试方法 稳态温度湿度偏置寿命测试

Semiconductor devices. Mechanical and climatic test methods. Steady-state temperature humidity bias life test

BS EN 60749-28:2017 半导体器件. 机械和气候试验方法. 静电放电(ESD)灵敏度试验. 带电器件模型(CDM). 器件级

Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Charged device model (CDM). Device level

BS EN 62435-2:2017 电子元件 电子半导体器件的长期存储第2部分：变质机制

Electronic components - Long-term storage of electronic semiconductor devices. - Part 2: Deterioration mechanisms

IEC 60286-1:2017 自动装配用元件的包装 第1部分:具有轴向引线的元件在连续编带上的带式包装

This part of IEC 60286 applies to the tape packaging of components with axial leads for use in electronic equipment. In general, the tape is applied to the component leads. It covers requirements for taping techniques used with equipment for the preforming of leads, automatic handling, insertion and other operations, and includes only those dimensions which are essential to the taping of components intended for the above-mentioned purposes.

Packaging of components for automatic handling - Part 1: Tape packaging of components with axial leads on continuous tapes

ISO/TS 11888:2017 纳米技术.根据细观形状因数确定多层壁碳纳米管的特性

Nanotechnologies - Characterization of multiwall carbon nanotubes - Mesoscopic shape factors

DIN EN 60191-6-13:2017 半导体装置的机械标准化.第6-13部分:小间距球栅阵列(FBGA)和小间距盘栅阵列(FLGA)用顶部开口型插座的设计指南(IEC 60191-6-13-2016);德文版本EN 60191-6-13-2016

Mechanical standardization of semiconductor devices - Part 6-13: Design guideline of open-top-type sockets for Fine-pitch Ball Grid Array (FBGA) and Fine-pitch Land Grid Array (FLGA) (IEC 60191-6-13:2016); German version EN 60191-6-13:2016

ISO/TS 10868:2017 纳米技术.用紫外-可见-近红外线(UV-Vis-NIR)吸收光谱描述单层碳奈米管

Nanotechnologies - Characterization of single-wall carbon nanotubes using ultraviolet-visible-near infrared (UV-Vis-NIR) absorption spectroscopy

BS IEC 62830-3:2017 半导体器件. 收集和产生能量的半导体器件. 第3部分: 基于振动的电磁能量收集

Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 3: Vibration based electromagnetic energy harvesting

DIN EN 60749-44:2017 半导体器件.机械和气候试验方法.第44部分:半导体设备的中子束照射单粒子效应(SEE)试验方法(IEC 60749-44-2016);德文版本EN 60749-44-2016

Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016

IEC 62951-1:2017 半导体器件. 柔性和可伸缩半导体器件. 第1部分: 柔性基板上导电薄膜的拉伸试验方法

This part of IEC 62951 specifies a bending test method to measure the electromechanical properties or flexibility of conductive thin films deposited or bonded on flexible non-conductive substrates. Conductive thin films on flexible substrates are extensively used in flexible electronic devices and flexible semiconductors. Conductive thin films include any films deposited or bonded onto a non-conductive flexible substrate such as thin metal film, transparent conducting electrode, and thin silicon film. The electrical and mechanical behaviours of thin films on flexible substrates differ from those of freestanding films and substrates due to their interfacial interactions and adhesion between the film and substrate. The object of this standard is to establish simple and repeatable test methods for evaluating the electromechanical properties or flexibility of conductive thin films on flexible substrate. The bending test methods include outer bending test and inner bending test.

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 1: Bending test method for conductive thin films on flexible substrates

DIN EN 62047-25:2017 半导体器件. 微型机电装置. 第25部分: 硅基MEMS制造技术. 微键合区拉压和剪切强度的测量方法(IEC 62047-25-2016); 德文版本EN 62047-25-2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (IEC 62047-25:2016); German version EN 62047-25:2016

IEC 60749-5:2017 半导体器件.机械和气候试验方法.第5部分:稳态温度湿度偏差耐久性试验

This part of IEC 60749 provides a steady-state temperature and humidity bias life test for the purpose of evaluating the reliability of non-hermetic packaged solid-state devices in humid environments. This test method is considered destructive.

Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test

JIS C 5630-1:2017 半导体装置.微型机电装置.第1部分:术语和定义

Semiconductor devices -- Micro-electromechanical devices -- Part 1: Terms and definitions

IEC 60749-6:2017 半导体器件.机械和气候试验方法.第6部分:高温下储存

The purpose of this part of IEC 60749 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.

Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature