L40 半导体分立器件综合 标准查询与下载
共找到 1197 条与 半导体分立器件综合 相关的标准，共 80 页
This part of IEC 60747 gives the terminology, essential ratings, characteristics, safety tests as well as the measuring methods for photocouplers (or optocouplers). NOTE The word "optocoupler" can also be used instead of "photocoupler".
Semiconductor devices.Discrete devices.Part 5-5: Optoelectronic devices.Photocouplers
- ICS
- 31.080.01;31.260
- CCS
- L40
- 发布
- 2013-05-01
- 实施
Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
- ICS
- 31.080.01;31.260
- CCS
- L40
- 发布
- 2013-05
- 实施
- 2013-05-15
Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silicon Fine-pitch
- ICS
- 01.100.25;31.240
- CCS
- L40
- 发布
- 2013-04-30
- 实施
- 2013-04-30
Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM) (IEC 60749-27:2006 + A1:2012); German version EN 60749-27:2006 + A1:2012
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2013-04
- 实施
- 2013-04-01
This standard establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD).
Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2013-04
- 实施
- 2018-02-02
Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2013-01-31
- 实施
- 2013-01-31
Mechanical standardization of semiconductor devices - Part 6-16 : glossary of semiconductor test and burn-in sockets for BGA, LGA, FBGA and FLGA
- ICS
- 31.240
- CCS
- L40
- 发布
- 2013-01-05
- 实施
- 2013-01-05
1.1 This specification covers aluminum???18201;% silicon alloy wire for internal connections in semiconductor devices and is limited to wire of diameter up to and including 76 ??m (0.003 in.). For diameters larger than 76 ??m (0.003 in.), the specifications are to be agreed upon between the purchaser and the supplier. 1.2 The values stated in SI units are to be regarded as the standard, regardless of whether they appear first or second in a table. Values given in parentheses are for information only.
Standard Specification for Fine Aluminumndash;1???% Silicon Wire for Semiconductor Lead-Bonding
- ICS
- 29.060.10 (Wires)
- CCS
- L40
- 发布
- 2013
- 实施
Standard for Safety for Electrically Isolated Semiconductor Devices
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2013
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 13: bend- and shear- type test methods of measuring adhesive strenght for MEMS structures
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-12-01
- 实施
- 2012-12-14
Semiconductor devices - Micro-electromechanical devices - Part 10: micro-pillar compression test for MEMS materials
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-12-01
- 实施
- 2012-12-14
This part of IEC 60191 provides the outline drawings and dimensions common to siliconbased package structures and materials of ball grid array packages (BGA) and land grid array packages (LGA).
Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
- ICS
- 01.100.25;31.080.01;31.240
- CCS
- L40
- 发布
- 2012-12
- 实施
- 2012-12-13
Semiconductor devices - Micro-electromechanical devices - Part 13: Bend- and shear- type test methods of measuring adhesive strength for MEMS structures (IEC 62047-13:2012); German version EN 62047-13:2012
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-10-01
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012); German version EN 62047-14:2012
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-10-01
- 实施
Mechanical standardization of semiconductor devices - Part 2 : Dimensions; Amendment 19
- ICS
- 31.080.01;31.240
- CCS
- L40
- 发布
- 2012-10
- 实施
- 2012-10-04
Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM)
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-09
- 实施
Mechanical standardization of semiconductor devices - Part 2: Dimensions
- ICS
- 31.240
- CCS
- L40
- 发布
- 2012-09
- 实施
Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (IEC 60747-15:2010); German version EN 60747-15:2012
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-08
- 实施
- 2012-08-01
Semiconductor devices - Micro-electromechanical devices - Part 12 : bending fatigue testing method of thin film materials using resonant vibration of MEMS structures.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-07-01
- 实施
- 2012-07-06
Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-06
- 实施
