L40 半导体分立器件综合 标准查询与下载
共找到 1197 条与 半导体分立器件综合 相关的标准，共 80 页
This part of IEC 62047 specifies terms and definitions@ ratings and characteristics@ and measuring methods of gyroscopes. Gyroscopes are primarily used for consumer@ general industries and aerospace applications. MEMS and semiconductor lasers are widely used for device technology of gyroscopes. Hereafter@ gyroscope is referred to as gyro.
Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscopes
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2014-06
- 实施
- 2014-07-09
This part of IEC 62047 specifies a tensile test method to measure electromechanical properties of conductive thin micro-electromechanical systems (MEMS) materials bonded on non-conductive flexible substrates. Conductive thin-film structures on flexible substrates are extensively utilized in MEMS@ consumer products@ and flexible electronics. The electrical behaviours of films on flexible substrates differ from those of freestanding films and substrates due to their interfacial interactions. Different combinations of flexible substrates and thin films often lead to various influences on the test results depending on the test conditions and the interfacial adhesion. The desired thickness of a thin MEMS material is 50 times thinner than that of the flexible substrate@ whereas all other dimensions are similar to each other.
Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates
- ICS
- 31.080.01;31.080.99;31.220.01
- CCS
- L40
- 发布
- 2014-06
- 实施
- 2014-06-25
Photocatalysis. Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
- ICS
- 25.220.20
- CCS
- L40
- 发布
- 2014-04-30
- 实施
- 2014-04-30
Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses (IEC 62047-19:2013); German version EN 62047-19:2013
- ICS
- 31.220.01
- CCS
- L40
- 发布
- 2014-04
- 实施
- 2014-04-01
Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2014-04
- 实施
- 2014-04-01
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013); German version EN 62047-11:2013
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2014-04
- 实施
- 2014-04-01
Mechanical standardization of semiconductor devices. Coding system and classification into forms of package outlines for semiconductor device packages
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2014-03-31
- 实施
- 2014-03-31
La présente partie de la CEI 62047 spécifie des termes, des définitions, des valeurs assignées et caractéristiques essentielles et des méthodes de mesure concernant les compas électroniques. La présente norme s'applique aux compas électroniques composés de capteurs magnétiques et de capteurs d'accélération ou de capteurs magnétiques seuls. La présente norme s'applique aux compas électroniques pour les équipements électroniques mobiles.Pour les compas électroniques maritimes, voir l'ISO 11606.Les compas électroniques sont aussi désignés sous la forme abrégée "e-compas". Les types d'ecompas sont: les e-compas à 2 axes, les e-compas à 3 axes, les e-compas à 6
Semiconductor devices - Micro-electromechanical devices - Part 19 : electronic compasses
- ICS
- 31.080.99
- CCS
- L40
- 发布
- 2014-03-19
- 实施
- 2014-03-19
La présente partie de la CEI 62047 définit la méthode d'essai pour mesurer les coefficients de dilatation thermique linéaire (CLTE) de matériaux de systèmes micro-électromécaniques (MEMS) solides autonomes minces (métalliques, céramiques, polymères, etc.) dont la longueur est comprise entre 0,1 mm et 1 mm, la largeur entre 10 pico m et 1 mm et l'épaisseur entre 0,1 pico m et 1mm, qui sont les matériaux structurels principaux utilisés pour les MEMS, les micromachines et autres. Cette méthode d'essai peut s'appliquer à la mesure des CLTE dans la gamme de températures allant de la température ambiante jusqu'à 30 % de la température de fusion du matériau.
Semiconductor devices - Micro-electromechanical devices - Part 11 : test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
- ICS
- 29.045;31.080.99
- CCS
- L40
- 发布
- 2014-03-12
- 实施
- 2014-03-12
Semiconductor devices.Micro-electromechanical devices.Part 13: Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
- ICS
- 31.080.99
- CCS
- L40
- 发布
- 2014-02-20
- 实施
Semiconductor devices. Micro-electromechanical devices. Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2013-10-31
- 实施
- 2013-10-31
Environmental acceptance requirements for tin whisker susceptibility of tin and tin alloy surface finishes on semiconductor devices
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2013-10-31
- 实施
- 2013-10-31
Semiconductor devices. Micro-electromechanical devices. Electronic compasses
- ICS
- 31.220.01
- CCS
- L40
- 发布
- 2013-10-31
- 实施
- 2013-10-31
Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2013-10-31
- 实施
- 2013-10-31
Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
- ICS
- 31.180;31.240
- CCS
- L40
- 发布
- 2013-10
- 实施
Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
- ICS
- 31.200
- CCS
- L40
- 发布
- 2013-10
- 实施
This International Standard describes the methodology applicable for environmental acceptance testing of tin-based surface finishes and mitigation practices for tin whiskers on semiconductor devices. This methodology may not be sufficient for applications with special requirements@ (i.e. military@ aerospace@ etc.). Additional requirements may be specified in the appropriate requirements (procurement) documentation. This International Standard does not apply to semiconductor devices with bottom-only terminations where the full plated surface is wetted during assembly (for example: quad-flat no-leads and ball grid array components@ flip chip bump terminations). Adherence to this standard includes meeting the reporting requirements described in Clause 6.
Environmental acceptance requirements for tin whisker susceptibility of tin and tin alloy surface finishes on semiconductor devices
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2013-09
- 实施
- 2013-09-27
Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
- ICS
- 01.100.25;31.240
- CCS
- L40
- 发布
- 2013-08
- 实施
- 2013-08-01
This part of IEC 62047 specifies the test method to measure the linear thermal expansion coefficients (CLTE) of thin free-standing solid (metallic@ ceramic@ polymeric etc.) microelectro- mechanical system (MEMS) materials with length between 0@1 mm and 1 mm and width between 10 ?? and 1 mm and thickness between 0@1 ?? and 1 mm@ which are main structural materials used for MEMS@ micromachines and others. This test method is applicable for the CLTE measurement in the temperature range from room temperature to 30 % of a material's melting temperature.
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
- ICS
- 31.080.01;31.080.99;31.220.01
- CCS
- L40
- 发布
- 2013-07
- 实施
- 2013-07-19
This part of IEC 62047 specifies the method for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0@1 ?? and 10 ??. Thin films are used as main structural materials for Micro-electromechanical Systems (abbreviated as MEMS in this document) and micromachines. The main structural materials for MEMS@ micromachines@ etc.@ have special features@ such as a few micron meter size@ material fabrication by deposition@ photolithography@ and/ or nonmechanical machining test piece. This International Standard specifies the bend testing and test piece shape for micro-sized smooth cantilever type test pieces@ which enables a guarantee of accuracy corresponding to the special features.
Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
- ICS
- 31.080.01;31.080.99;31.220.01
- CCS
- L40
- 发布
- 2013-07
- 实施
- 2013-07-19
