L40 半导体分立器件综合 标准查询与下载
共找到 1197 条与 半导体分立器件综合 相关的标准，共 80 页
Semiconductor devices. Micro-electromechanical devices. Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-05-31
- 实施
- 2012-05-31
Semiconductor devices - Micro-electromechanical devices - Part 5 : RF MEMS switches.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-05-01
- 实施
- 2012-05-04
Semiconductor devices - Mechanical and climatic test methods - Part 23 : high temperature operating life.
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-05-01
- 实施
- 2012-05-04
Semiconductor devices. Discrete devices. Isolated power semiconductor devices
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-04-30
- 实施
- 2012-04-30
Semiconductor devices - Micro-electromechanical devices - Part 9 : wafer to wafer bonding strength measurement for MEMS.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-04-01
- 实施
- 2012-04-28
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-03
- 实施
- 2012-03-01
Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-03
- 实施
This part of IEC 62047 describes terminology@ definition@ symbols@ test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various structures@ contacts (d.c. contact and capacitive contact)@ configurations (series and shunt)@ switching networks (SPST@ SPDT@ DPDT@ etc.)@ and actuation mechanism such as electrostatic@ electro-thermal@ electromagnetic@ piezoelectric@ etc. The RF MEMS switches are promising devices in advanced mobile phones with multi-band/mode operation@ smart radar systems@ reconfigurable RF devices and systems@ SDR (Software Defined Radio) phones@ test equipments@ tunable devices and systems@ satellite@ etc.
Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches; Corrigendum 1
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-03
- 实施
- 2012-04-29
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-03
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches (IEC 62047-5:2011); German version EN 62047-5:2011
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-03
- 实施
- 2012-03-01
Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases (IEC 60749-7:2011); German version EN 60749-7:2011
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-02-01
- 实施
- 2012-02-01
Semiconductor devices - Mechanical and climatic test methods - Part 7 : internal moisture content measurement and the analysis of other residual gases.
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-02-01
- 实施
- 2012-02-18
This part of IEC 62047 specifies the adhesive testing method between micro-sized elements and a substrate using the columnar shape of the specimens. This international standard can be applied to adhesive strength measurement of microstructures@ prepared on a substrate@ with width and thickness of 1 ?? to 1 mm@ respectively. Micro-sized elements of MEMS devices are made up of laminated fine pattern films on a substrate@ which are fabricated by deposition@ plating@ and/or coating with photolithography. MEMS devices include a large number of interfaces between dissimilar materials@ at which delamination occasionally occurs during fabrication or in operation. Combination of the materials at the junction determines the adhesive strength; moreover@ defects and residual stress in the vicinity of the interface@ which are changing by processing condition@ strongly affect the adhesive strength. This standard specifies the adhesive testing method for microsized- elements in order to optimally select materials and processing conditions for MEMS devices. This standard does not particularly restrict test piece material@ test piece size and performance of the measuring device@ since the materials and size of MEMS device components range widely and testing machine for micro-sized materials has not been generalized.
Semiconductor devices - Micro-electromechanical devices - Part 13: Bend- and shear-type test methods of measuring adhesive strength for MEMS structures
- ICS
- 31.080.01;31.080.99;31.220.01
- CCS
- L40
- 发布
- 2012-02
- 实施
- 2012-02-29
This part of IEC 62047 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0@5 ?? to 300 ??. The metallic film materials described herein are typically used in electric components@ MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting@ it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction@ the effectiveness of manufacturing MEMS components by a forming process can also be improved@ because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process.
Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit measuring method of metallic film materials
- ICS
- 31.080.01;31.080.99;31.220.01
- CCS
- L40
- 发布
- 2012-02
- 实施
- 2012-02-29
Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials; Corrigendum 1
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-02
- 实施
Semiconductor devices - Mechanical and climatic test methods - Part 40: Board level drop test method using a strain gauge (IEC 60749-40:2011); German version EN 60749-40:2011
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-02
- 实施
- 2012-02-01
Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection (IEC 62047-7:2011); German version EN 62047-7:2011
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2012-02
- 实施
- 2012-02-01
Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (IEC 60749-21:2011); German version EN 60749-21:2011
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-01
- 实施
- 2012-01-01
Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (IEC 60749-29:2011); German version EN 60749-29:2011
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2012-01
- 实施
- 2012-01-01
1.1 This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below 300 rd(SiO2)/s. These tests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet specific hardness requirements or to evaluate the parts for use in a range of radiation environments. 1.2 The methods and guidelines presented will be applicable to characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated circuits. They will be appropriate for treatment of the effects of electron and photon irradiation. 1.3 This guide provides a framework for choosing a test sequence based on general characteristics of the parts to be tested and the radiation hardness requirements or goals for these parts. 1.4 This guide provides for tradeoffs between minimizing the conservative nature of the testing method and minimizing the required testing effort. 1.5 Determination of an effective and economical hardness test typically will require several kinds of decisions. A partial enumeration of the decisions that typically must be made is as follows: 1.5.1 Determination of the Need to Perform Device Characterization???For some cases it may be more appropriate to adopt some kind of worst case testing scheme that does not require device characterization. For other cases it may be most effective to determine the effect of dose-rate on the radiation sensitivity of a device. As necessary, the appropriate level of detail of such a characterization also must be determined. 1.5.2 Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test Result???The results of radiation testing on some types of devices are relatively insensitive to the dose rate of the radiation applied in the test. In contrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies for managing the dose rate sensitivity of test results will be discussed. 1.5.3 Choice of an Effective Test Methodology???The selection of effective test methodologies will......
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
- ICS
- 31.080.01 (Semi-conductor devices in general)
- CCS
- L40
- 发布
- 2012
- 实施
