L40 半导体分立器件综合 标准查询与下载



共找到 1197 条与 半导体分立器件综合 相关的标准,共 80

Load test of a bolt-clamped Langevin vibrator using wattmeter method

ICS
31.080.99
CCS
L40
发布
2016-03-22
实施

Test method for 10KeV low-energy X-ray total dose irradiation of semiconductor devices

ICS
31.080.01
CCS
L40
发布
2016-01-15
实施
2016-06-01

This part of IEC 62047 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

ICS
31.080.01;31.080.99;31.220.01
CCS
L40
发布
2016-01
实施
2016-01-09

This part of IEC 62047 defines terms for micro-electromechanical devices including the process of production of such devices.

Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions

ICS
01.040.31;31.080.01;31.080.99;31.220.01
CCS
L40
发布
2016-01
实施
2016-01-08

Semiconductor devices -- Micro-electromechanical devices -- Part 20: Gyroscopes

ICS
31.080.99
CCS
L40
发布
2015-11-20
实施

Nanomanufacturing - Large scale manufacturing for nanoelectronics

ICS
07.030;25.020
CCS
L40
发布
2015-09
实施

Semiconductor devices. Micro-electromechanical devices. Bulge test method for measuring mechanical properties of thin films

ICS
31.080.99
CCS
L40
发布
2015-07-31
实施
2015-07-31

Semiconductor devices. Micro-electromechanical devices. Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection methods

ICS
31.080.99
CCS
L40
发布
2015-07-31
实施
2015-07-31

Semiconductor devices. Micro-electromechanical devices. Test method of bonding strength between PDMS and glass

ICS
31.080.99
CCS
L40
发布
2015-07-31
实施
2015-07-31

Semiconductor die products. Questionnaire for die users and suppliers

ICS
31.080.99
CCS
L40
发布
2014-11-30
实施
2014-11-30

Semiconductor devices. Micro-electromechanical devices. Electromechanical tensile test method for conductive thin films on flexible substrates

ICS
01.080.99
CCS
L40
发布
2014-10-31
实施
2014-10-31

Semiconductor devices. Mechanical and climatic test methods. Temperature and humidity storage

ICS
31.080.01
CCS
L40
发布
2014-10-31
实施
2014-10-31

Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials

ICS
31.080.99
CCS
L40
发布
2014-10-31
实施
2014-10-31

Semiconductor devices. Micro-electromechanical devices. Gyroscopes

ICS
31.080.99
CCS
L40
发布
2014-10-31
实施
2014-10-31

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (IEC 60749-26:2013); German version EN 60749-26:2014

ICS
31.080.01
CCS
L40
发布
2014-09-01
实施

Test methods for the characterization of organic transistor-based ring oscillators

ICS
07.030
CCS
L40
发布
2014-08-31
实施
2014-08-31

Test methods for the characterization of organic transistors and materials

ICS
07.030
CCS
L40
发布
2014-08-31
实施
2014-08-31

Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages

ICS
01.080.40;31.080.01
CCS
L40
发布
2014-08-23
实施
2014-08-23

Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Human body model (HBM)

ICS
31.080.01
CCS
L40
发布
2014-06-30
实施
2014-06-30

This part of IEC 62047 specifies a tensile test method to measure electromechanical properties of conductive thin micro-electromechanical systems (MEMS) materials bonded on non-conductive flexible substrates. Conductive thin-film structures on flexible substrates are extensively utilized in MEMS@ consumer products@ and flexible electronics. The electrical behaviours of films on flexible substrates differ from those of freestanding films and substrates due to their interfacial interactions. Different combinations of flexible substrates and thin films often lead to various influences on the test results depending on the test conditions and the interfacial adhesion. The desired thickness of a thin MEMS material is 50 times thinner than that of the flexible substrate@ whereas all other dimensions are similar to each other.

Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates

ICS
31.080.01;31.080.99;31.220.01
CCS
L40
发布
2014-06
实施
2014-06-25



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