29.045 半导体材料 标准查询与下载

SJ 3248-1989 重掺砷化镓和磷化铟载流子浓度的红外反射测试方法

本标准规定了红外反射法测量重掺砷化镓和磷化铟载流子浓度的测量原理，仪器设备、样品制备、测量步骤。结果计算和精度等。 本标准适用于测量重掺砷化镓和磷化锢单晶载流子浓度，也适用于测量外延层的载流子浓度。

Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection

SJ 3245-1989 磷化铟单晶位错的测量方法

本标准规定了磷化铟单晶(100)面和(111)In面位错的腐蚀显示及显微测量的原理、仪器试剂、测量步骤。 本标准适用于位错密度在0～10^(5)/cm^(2)范围的单晶测量，被检测晶面的晶向偏差在5°以内。

Methods for measuring dislocation of Indium phosphide single-crystal

SJ 3246-1989 铝镓砷(AlxGa1-x As)材料中铝组分的光荧光测试方法

本标准规定了铝镓砷材料中铝组分的测量原理，测量步骤，试验结果和精度。 本标准适用于确定铝镓砷的光荧光峰值波长和相应铝的摩尔百分比。铝含量的适用范围为x=0～45%，相应于室温下(297K)铝镓砷的峰值波长λpL=871.6～613.2nm。

Methods for measuring Aluminium component in Aluminium-Gallium-Arsenic by phosphors method

SJ 3247-1989 同型砷化镓外延层厚度的红外干涉测试方法

本标准规定了与衬底同型砷化镓外延层厚度的红外干涉测量原理，仪器设备，样品制备测量步骤，结果计算和精度。 本标准适用于与衬底同型砷化镓外延层厚度的测量，衬底和外延层室温电阻率应分别小于0.02Ω cm和大于0.1ΩZ·cm，可测厚度大于2μm。

Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference

SJ 3244.1-1989 砷化镓和磷化铟材料霍尔迁移率和载流子浓度的测量方法

本标准规定了砷化镓和磷化铟材料霍尔迁移率和载流子浓度的测量原理，测量步骤，试验结果的讣算，精度。 本标准适用于电阻牢小于10^(4)Ωcm的砷化镓和磷化铟材料(包括半绝缘衬底上生长的砷化镓外延层)霍尔迁移率和载流子浓度的测量。也适用于其它半导体材料的测量。由于霍尔迁移率是由霍尔系数和电阻率汁算出来的，所以本标准又适用于这两个参数的单个测量。

Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide

SJ 3244.5-1989 砷化镓和磷化铟材料补偿度的测试方法

本标准适用于n型、P型砷化镓和磷化铟单晶及高阻衬底外延层，载流子浓度在1×lO^(12)～5×10^(15)cm^(-3)范围的半导体材料的补偿度的测试分析。原则上也适用于其他Ⅲ－V族化合物材料补偿度的测试分析。

Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias

SJ 3244.4-1989 砷化镓和磷化铟材料载流子浓度剖面分布的测试方法.电化学电压电容法

1.1 本标准规定了电化学电压电容法测量的原理、仪器和电解液要求、测量步骤、测量结果的计算。 1.2 本标准适用于载流子浓度10^(14)～10(19)cm^(-3)的n型和P型砷化镓、磷化铟，也适用于铝镓砷和镓铟砷磷材料载流子浓度剖面分布的测量。

Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method

SJ 3249.1-1989 半绝缘砷化镓和磷化铟体单晶材料的电阻率测试方法

本标准规定了半绝缘砷化镓和磷化铟体单晶材料电阻率的测量原量，仪器设备，测量步骤，计算方法。 本标准适用于室温电阻率为10^(6)～10^(8)Ω·cm均匀的砷化镓和磷化铟体单品半绝缘材料、电阻率在10^(4)～10^(5)Ω·cm时也可参照使用。

Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material

ARMY MIL-A-51356 A (2)-1989 ABC-M5A2辐射尘面积预估

This amendment forms a part of MIGA-51356A(EA), dated 25 February 1987, and is approved for use by the U.S. Army Chemical Research, Development and Engineering Center, Department of the Army and is available for use by all Departments and Agencies of the Department of Defense

AREA PREDICTOR, RADIOLOGICAL FALLOUT, ABC-M5A2

ASTM F1212-89(2002) 砷化镓晶片热稳定性的试验方法

1.1 This destructive test method determines whether a given sample of semi-insulating gallium arsenide (GaAs) will remain semi-insulating after exposure to the high temperatures normally required for the activation of implanted layers. 1.2 The underlying assumption is that other wafers of GaAs, whose manufacturing history was the same as the wafer from which the test sample was taken, will respond to high temperatures in like manner. 1.3 The emphasis in this test method is on simplicity and safety of apparatus, and on securing a measurement that is independent of the apparatus used. 1.4 This test method is directly applicable to uncapped and unimplanted samples of GaAs. However, users of this test method may extend it to capped or implanted samples, or both, in which case a controlled test of capped versus uncapped samples, or implanted versus unimplanted samples, is recommended. 1.5 This test method detects impurities "from the bulk" (that is, from within the GaAs wafer) that will likely affect the electrical behavior of devices formed on the surface of the wafer. This test method is not sensitive to surface impurities or process-induced impurities, except as interferences (see Interferences). 1.6

Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers

ARMY MIL-R-55403 VALID NOTICE 1-1988 OR-114()/T型模拟辐射接收组

This commercial item description covers brown kraft paper used for general wrapping applications.

RECEIVER GROUP, SIMULATED RADIAC, OR-114( )/T

DIN 50443-1:1988 半导体工艺使用材料的检验.第1部分:用X射线外形测量法检测半导体单晶硅中晶体缺陷和不均匀性

This standard determines the methods for the recognition of defects and inhomogeneities in semiconductor silicon single crystals by x-ray topography.

Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography

DIN 50435:1988 半导体材料试验:采用四探针/直流法测量硅片和锗片电阻率的径向变化

Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method

DIN 50431:1988 半导体材料的试验.用探针直线排列的四探针/直流法测量单晶硅或锗单晶体的电阻率

The standard determines a test method for the measurement of the electrical resistivity of silicon or germanium single crystals by means of the four-point-probe direct current method with collinear four probe array.

Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array

VDI/VDE 3717 Blatt 3-1988 掩模工程；图层

Mask engineering; layers

VDI/VDE 3717 Blatt 5-1988 掩模工程；空白缺陷

Mask engineering; blank defects

VDI/VDE 3717 Blatt 2-1987 掩模工程；基材

This specification contains the general requirements for substrates of hard-surface masks.

Mask engineering; substrates

ARMY MIL-A-51356 A-1987 ABC-M5A2辐射尘面积预估

This specification is approved for use within U.S. Army Chemical Research, Development and Engineering Center, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.

AREA PREDICTOR, RADIOLOGICAL FALLOUT, ABC-M5A2

DIN 50434:1986 半导体工艺材料的检验.对(111)和(100)表面采用蚀刻技术的单晶硅的晶体结构缺陷的测定

This standard defines a method for the determination of the crystallographic perfection of mono-crystalline silicon by etch techniques on {111}- and {100}-surfaces. It is applicable to n-type or p-typed doped silicium with specific resistance down to 0,005cm and to dislocation densities within 100 and 100000 cm.#,,#

Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces

VDI/VDE 3717 Blatt 1-1985 掩模工程；介绍、术语和定义

This guideline is intended to provide both the manufacturer and the user of masks with a concise survey of current mask engineering. In addition, it contains basic information concerning the terms, definitions, specifications and working methods used.

Mask engineering; introduction, terms and definitions