29.045 半导体材料 标准查询与下载

DIN 50441-3:1985 半导体工艺材料的检验.第3部分:半导体切片几何尺寸的测量.第3部分:用多射线干涉法测定抛光切片的平面偏差

Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference

ARMY MIL-R-55615 B-1984 IM-174()/PD型核辐射剂量计

This specification covers a portable survey meter that detects and measures gamma radiation, and is designated Radiacmetef IM-174( )/PD(see 6.5).

RADIACMETER IM-174( )/PD

GOST 26239.3-1984 半导体硅及其初始产品和石英.磷测定法

Semiconductor selicon, raw materials for its production and quartz. Methods of phosphorus determination

GOST 26239.1-1984 半导体硅及其初始产品和石英.杂质测定法

Semiconductor silicon, raw materials for its production and quartz. Method of impurities determination

GOST 26239.2-1984 半导体硅及其初始产品和石英.硼测定法

Semiconductor selicon, raw materials for its production and quartz. Methods of boron determination

GOST 26239.6-1984 四氯化硅.二氯硅烷、三氯硅烷、四氯化硅、1，3，3，3四氯化矽洛克西康，1，3，3，3四氯化矽洛克西康五氯化矽洛克西康，六氯化矽洛克西康，和六氯硅烷的测定法

Silicon tetrachloride. Method of dichlorsilane, trichlorsilane, silicon tetrachloride, 1,3,3,3-tetrachlordisiloxane, 1,1,3,3-tetrachlordisilane, pentachlordisiloxane, hexachlordisiloxane, hexaclordisilane determination

GOST 26239.5-1984 半导体硅和石英.杂质定法

Semiconductor silicon and quartz. Method of impurities determination

GOST 26239.8-1984 半导体硅及其初始产品.二氯硅烷，三氯硅烷和四氯化硅测定法

Semiconductor silicon and raw materials for its production. Method of dichlorsilane, trichlorsilane and silicon tetrachloride determination

GOST 26239.7-1984 半导体硅.氧、碳、氮测定法

Semiconductor silicon. Method of oxygen, carbon and nitrogen determination

GOST 26239.0-1984 半导体硅及其初始产品和石英.分析法

Semiconductor silicon, raw materials for its production and quartz. General requirements for methods of analysis

ASTM F358-83(2002) 磷化砷化镓片的最大光致发光波长及其相应成分的试验方法

1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs(1 x)Px.1.2 Photoluminescence measurements indicate the composition only in the illuminated region and only within a very short distance from the surface, a distance limited by the penetration of the radiation and the diffusion length of the photo-generated carriers, as contrasted to X-ray measurements which sample a much deeper volume.1.3 This test method is limited by the surface preparation procedure to application to epitaxial layers of the semiconductor grown in a vapor-phase reactor on a flat substrate. It is directly applicable to n-type GaAs(1x)Px with the wavelength, PL, of the photoluminescence peak in the range from 640 to 670 nm, corresponding to mole percent phosphorus in the range from 36 to 42 % ( x = 0.36 to 0.42). The calibration data provided for the determination of x from P L is applicable to material doped with tellurium or selenium at concentrations in the range from 1016 to 1018 atoms/cm3.1.4 The principle of this test method is more broadly applicable. Other material preparation methods may require different surface treatments. Extension to other dopants, doping ranges or composition ranges requires further work to relate PL to the phosphorus content as determined by X-ray measurements of the precise dimensions of the unit cell upon which the calibration data are based. It is essential that calibration specimens have uniform composition in the volume sampled.1.5 This test method is essentially nondestructive. It requires a light etching of the sample to be measured. The removal of a layer of material approximately 0.5 to 1.0 m in thickness is required. This etching does not degrade the specimen in that devices can still be fabricated from it.1.6 This test method is applicable to process control in the preparation of materials and to materials acceptance.1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 7.

Standard Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers

DIN 50439:1982 半导体技术材料的试验.用电容--电压法和水银接点确定单晶层半导体材料中掺杂剂的浓度分布曲线

Testing of materials for semiconductor technology; determination of the dopant concen-tration profile of single crystalline semiconductor material by means of the capacitance-voltage method and mercury contactEssais des matériaux pour la technologie semi

Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact

DIN 50438-2:1982 半导体工艺材料的检验.第2部分:用红外线吸收法测量硅中杂质含量.碳

Testing of materials for semiconductor technology; determination of impurity content in silicon by infrared absorption; carbonEssais des matériaux pour la technologie semi-conducteurs; détermination de la teneur en impureté dans le silicium au moyen de l

Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon

DIN 50433-3:1982 半导体工艺材料的检验.第3部分:采用劳埃反向散射法测定单晶体取向

Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scatteringEssais de matériaux pour la technologie semi-conducteurs; détermination de l'orientation de monocristaux par méthode pa

Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering

ARMY MIL-R-55350 A-1981 AN/UDM-2()型辐射校准器

This specification covers the requirements for Radiac Calibrator which provides the facilities for checking the operational reliability and calibration accuracy of various radiacmeters and radiac set. The calibrator consists of a dosimeter jig assembly and a dose rate jig assembly; each assembly can be utilized independently of the other(see 6.1).

RADIAC CALIBRATOR AN/UDM-2( )

DIN 50442-1:1981 半导体无机材料的检验.圆形单晶体半导体薄片表面结构的测定.第1部分:切割和研磨的薄片

Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slicesEssai des matériaux semi-conducteurs minéraux; détermination de la structure de la surface

Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices

GOST 19658-1981 多晶硅锭.技术条件

Настоящий стандарт распространяется на слитки монокристаллического кремния, получаемые методом Чохральского и предназначенные для изго

Monocrystalline silicon in ingots. Specifications

DIN 50437:1979 半导体无机材料的试验.用红外线干涉法测量硅外延生长层的的厚度

Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference methodEssais des matériaux semi-conducteurs minéraux; mesure de l'épaisseur des depots epitaxiques de silicium au moyen

Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method

ASTM F418-77(2002) 测量霍尔效应用恒定成分范围的外延磷化砷化镓试样的制备

The efficiency of light-emitting diodes is known to vary with the carrier density of the starting material. This procedure provides a technique to prepare specimens in which the Hall carrier density can be measured in a region typical of that in which devices are fabricated. This quantity, which is related to the carrier density, can be used directly as a quality control parameter. Mobility is a function of a number of parameters of a semiconductor, including ionized impurity density, compensation, and lattice defects, some or all of which may be relatable to material quality as reflected in device quality. Use of this procedure makes the measurement of the mobility of the constant composition region possible. Since in GaAs (1−x)Px with x near 0.38, as is most often used for light-emitting diodes, the direct (000 or Γ) minimum and the indirect (100 or X) minima are within a few millielectronvolts in energy of each other, both are populated with current-carrying electrons. The mobility in the two bands is significantly different, and the relative population of the two is dependent upon the precise composition (x value), doping level, and temperature. Therefore, both Hall coefficient and Hall mobility must be interpreted with care (2,3). In particular, a measurement of Hall carrier density will not agree with a carrier density measurement on the same specimen made by capacitance-voltage techniques. Nevertheless, if the intent of measuring the carrier density of purchased or grown specimens is to find those which are optimum for diode fabrication, Hall measurements can be of value because a curve of efficiency versus Hall carrier density can be derived for the device process to be used based upon data taken on specimens prepared in accordance with this procedure.1.1 This practice covers a procedure to be followed to free the constant composition region of epitaxially grown gallium arsenide phosphide, GaAs(1x)Px, from the substrate and graded region on which it was grown in order to measure the electrical properties of only the constant composition region, which is typically 30 to 100 m thick. It also sets forth two alternative procedures to be followed to make electrical contact to the specimen.1.2 It is intended that this practice be used in conjunction with Test Methods F 76.1.3 The specific parameters set forth in this recommended practice are appropriate for GaAs0. 62P0. 38, but they can be applied, with changes in etch times, to material with other compositions.1.4 This practice does not deal with making or interpreting the Hall measurement on a specimen prepared as described herein, other than to point out the existence and possible effects due to the distribution of the free carriers among the two conduction band minima.1.5 This practice can also be followed in the preparation of specimens of the constant composition region for light absorption measurements or for mass or emission spectrometric analysis.1.6 This practice becomes increasingly difficult to apply as specimens become thinner.1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. For hazard statement, see Section 9 and 11.9.2.4.

Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements

DIN 50433-1:1976 无机半导体材料的检验.第1部分:采用X射线衍射现象对单晶体取向的测定

Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffractionEssai de matériaux semi-conducteurs minéraux; détermination de l'orientation de monocristaux par diffraction de rayons X

Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffraction