L40 半导体分立器件综合 标准查询与下载

JJF 1236-2010 半导体管特性图示仪校准规范

本规范适用于具有插件单元或附属装置的半导体管特性图示仪(以下简称图示仪)的校准。

Calibration Specification for Semiconductor Device Curve Tracers

IEC 60191-6-18:2010 半导体器件的机械标准化.第6-18部分:表面安装半导体器件封装外形图绘制的一般规则.球栅阵列(BGA)的设计指南

This part of IEC 60191 provides standard outline drawings@ dimensions@ and recommended variations for all square ball grid array packages (BGA)@ whose terminal pitch is 1 mm or larger.

Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)

ASTM F980-10 测量硅半导体器件中中子感应位移故障的快速退火用标准指南

Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in them. A determination of hardness is often necessary for the short term (≈100 μs) as well as long term (permanent damage) following exposure. See Practice E722.1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies. 1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1) , but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard. 1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

IEC 60191-6:2009 半导体器件的机械标准化.第6部分:表面安装半导体器件封装外形图绘制的一般规则

This part of IEC 60191 gives general rules for the preparation of outline drawings of surfacemounted semiconductor devices. It supplements IEC 60191-1 and IEC 60191-3. It covers all surface-mounted devices discrete semiconductors with lead count of greater or equal to 8@ as well as integrated circuits classified as form E in Clause 3 of IEC 60191-4.

Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages

DIN EN 60749-20-1:2009 半导体器件.机械和气候试验方法.第20-1部分:对水分和焊接热综合效应敏感的表面安装设备的处理,包装,标签和运输(IEC 60749-20-1:2009),德文版本EN 60749-20

Semiconductor devices - Mechanical and climatic test methods - Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat (IEC 60749-20-1:2009); German version EN 60749-20-

BS IEC 60747-14-3:2009 半导体设备.半导体传感器.压力传感器

Semiconductor devices - Semiconductor sensors - Pressure sensors

BS EN 60749-20-1:2009 半导体器件.机械和气候试验方法.第20-1部分:对潮湿和焊接热综合效应敏感元器件的操作,包装,标识和运输

This part of IEC 60749 applies to all non-hermetic SMD packages which are subjected to reflow solder processes and which are exposed to the ambient air. The purpose of this document is to provide SMD manufacturers and users with standardized methods for handling, packing, shipping, and use of moisture/reflow sensitive SMDs which have been classified to the levels defined in IEC 60749-20. These methods are provided to avoid damage from moisture absorption and exposure to solder reflow temperatures that can result in yield and reliability degradation. By using these procedures, safe and damage-free reflow can be achieved, with the dry packing process, providing a minimum shelf life capability in sealed dry-bags from the seal date. Two test conditions, method A and method B, are specified in the soldering heat test of IEC 60749-20. For method A, moisture soak conditions are specified on the assumption that moisture content inside the moisture barrier bag is less than 30 % RH. For method B, moisture soaking conditions are specified on the assumption that manufacturer’s exposure time (MET) does not exceed 24 h and the moisture content inside the moisture barrier bag is less than 10 % RH. In an actual handling environment, SMDs tested by method A are permitted to absorb moisture up to 30 % RH, and SMDs tested by method B are permitted to absorb moisture up to 10 % RH. This standard specifies the handling conditions for SMDs subjected to the above test conditions.

Semiconductor devices - Mechanical and climatic test methods - Part 20-1:Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat

IEC 60749-20-1:2009 半导体器件.机械和气候试验方法.第20-1部分:抗湿及钎焊热度敏感综合影响的表面安装装置处理、包装、贴标签和运输

Semiconductor devices - Mechanical and climatic test methods - Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat

IEC 62258-1:2009 半导体压模产品.第1部分:采购和使用

Semiconductor die products - Part 1: Procurement and use

JIS C 5630-2:2009 半导体器件.微型机电器件.第2部分:薄膜材料的拉伸测试方法

Semiconductor devices -- Micro-electromechanical devices-- Part 2: Tensile testing method of thin film materials

JIS C 5630-3:2009 半导体器件.微型机电器件.第3部分:拉伸测试用薄膜标准试样

Semiconductor devices -- Micro-electromechanical devices-- Part 3: Thin film standard test piece for tensile testing

ASTM E1161-09(2014) 半导体和电子元件射线检验的标准实施规程

4.1 This practice establishes the basic minimum parameters and controls for the application of radiological examination of electronic devices. Factors such as device handling, equipment, ESDS, materials, personnel qualification, procedure and quality requirements, reporting, records and radiation sensitivity are addressed. This practice is written so it can be specified on the engineering drawing, specification or contract. It is not a detailed how-to procedure and must be supplemented by a detailed examination technique/procedure (see 9.1). 4.2 This practice does not set limits on radiation dose, but does list requirements to limit and document radiation dose to devices. When radiation dose limits are an issue, the requestor of radiological examinations must be cognizant of this issue and state any maximum radiation dose limitations that are required in the contractual agreement between the using parties. 1.1 This practice provides the minimum requirements for nondestructive radiologic examination of semiconductor devices, microelectronic devices, electromagnetic devices, electronic and electrical devices, and the materials used for construction of these items. 1.2 This practice covers the radiologic examination of these items to detect possible defective conditions within the sealed case, especially those resulting from sealing the lid to the case, and internal defects such as extraneous material (foreign objects), improper interconnecting wires, voids in the die attach material or in the glass (when sealing glass is used) or physical damage. 1.3 The values stated in inch-pound units are to be regarded as standard. No other units of measurement are included in this practice. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Practice for Radiologic Examination of Semiconductors and Electronic Components

NF C96-013-6-13:2008 半导体装置的机械标准化.第6-13部分:小间距球栅阵列和小间距盘栅阵列(FBGA/FLGA)用顶部开口型插座的设计指南

Mechanical standardization of semiconductor devices - Part 6-13 : design guideline of open-top-type socket for Fine-pitch Ball Grid Array and Fine-pitch Land Grid Array (FBGA/FLGA).

IEC 60749-20:2008 半导体器件.机械和气候试验方法.第20部分:SMDs塑料囊状物抗湿气和焊接热的综合影响

Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic-encapsulated SMDs to the combined effect of moisture and soldering heat

BS EN 62374:2007 半导体装置.依赖时间的栅极介电薄膜的介质击穿(TDDB)试验

This International Standard provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.

Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films

DIN EN 60749-38:2008 半导体器件.机械和气候试验方法.第38部分:带存储器的半导体器件用软错误试验法

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008); German version EN 60749-38:2008

JEDEC JESD30E-2008 半导体设备包装描述性标志法

This standard describes a systematic method for generating descriptive designators for semiconductor-device packages. The descriptive designator is intended to provide a useful communication tool, but has no implied control for assuring package interchangeability.

Descriptive Designation System for Semiconductor-device Packages

IEC 60747-1:2006/COR1:2008 半导体装置.第1部分:总则.技术勘误1

Semiconductor devices - Part 1: General; Corrigendum 1

DIN EN 60749-37:2008 半导体装置.机械和气候试验方法.第37部分:用加速计的电路板级落锤试验方法

Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer (IEC 60749-37:2008); German version EN 60749-37:2008

BS EN 60749-38:2008 半导体器件.机械和气候试验方法.带存储器的半导体器件用软错误试验法

This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory