IEC 60749-18-2002
半导体器件.机械和气候试验方法.第18部分:电离辐射(总剂量)

Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)

标准号

IEC 60749-18-2002

发布日期

2002年12月

实施日期

废止日期

无

中国标准分类号

L40

国际标准分类号

31.080.01

发布单位

IX-IEC

被代替标准

IEC 47/1657/FDIS-2002

适用范围

This part of IEC 60749 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (Co) gamma ray source. This standard provides an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. This standard addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and space-related applications. This standard may produce severe degradation of the electrical properties of irradiated devices and thus should be considered a destructive test.

IEC 60749-18-2002系列标准