29.045 半导体材料 标准查询与下载

KS L 1619-2013(2018) 四探针阵列导电陶瓷薄膜电阻率测试方法

Testing methods for resistivity of conductive fine ceramic thin films with four point probe array

KS L 1619-2013 电传导陶器薄膜电阻率测定方法.4点探针法

이 표준은 파인 세라믹 박막의 저항률을 4탐침법에 의해 시험하는 방법에 관하여 규정한다. 적용 가능한 저항률의 범위는 1×10-5 Ωcm∼2×102 Ωcm로 하며, 막의 두께는 500 μm 이하로 한다.

Testing methods for resistivity of conductive fine ceramic thin films with four point probe array

KS L 1619-2013(2023) 用四点探针阵列测试导电陶瓷薄膜电阻率的方法

Testing methods for resistivity of conductive fine ceramic thin films with four point probe array

KS L 1620-2013(2023) 范德波法测量导电陶瓷薄膜电阻率的试验方法

Test methods for measuring resistivity of electrically conductive ceramic thin films with Van der Pauw method

DB65/T 3486-2013 太阳能级多晶硅块红外探伤检测方法

Infrared flaw detection method for solar-grade polysilicon block

DB65/T 3485-2013 太阳能级多晶硅块少数载流子寿命测量方法

Measurement method for minority carrier lifetime of solar grade polysilicon block

YS/T 792-2012 单晶炉用碳/碳复合材料坩埚

本标准规定了单晶拉制炉用碳/碳复合材料坩埚的要求、试验方法、检测规则及标志、包装、运输、贮存、质量说明书和合同（或订货单）内容。 本标准适用于半导体领域单晶拉制炉用碳/碳复合材料坩埚，也适用于其他高温炉提纯多晶硅和冶炼金属用碳/碳复合材料坩埚。

Carbon-carbon composites crucible used in single crystal furnace

YS/T 838-2012 碲化镉

本标准规定了碲化镉的技术要求、检验方法、检验规则、包装、标志、运输、贮存、质量证明书、订货单（或合同）内容和安全提示。 本标准对应的碲化镉是以5N碲和5N镉为原料以高温合成技术制成的，该产品主要用于红外以及可见光的发光装置材料等。

Cadmium telluride

DB13/T 1632-2012 太阳能级多晶硅块

本标准规定了太阳能级多晶硅块的产品分类、要求、试验方法、检验规则、包装、标志、运输和贮存。本标准适用于太阳能级P型多晶硅块。

Solar Grade Polysilicon Block

YS/T 43-2011 高纯砷

本标准规定了高纯砷的分类和标记、要求、试验方法、检验规则、产品标识、包装、运输、贮存等。 本标准适用于以工业砷为原料，经升华、氯化、精馏、氢还原等加工提纯后制成的纯度不小于99.999%、99.999 9%、99.999 99%的高纯砷。产品主要用于制造砷化镓等Ⅲ-Ⅴ族化合物半导体、外延源以及半导体掺杂剂等。

High-purity arsenic

DB35/T 1146-2011 硅材料中杂质元素含量测定 辉光放电质谱法

本标准规定了测定硅材料中杂质元素含量的辉光放电质谱法（G D M S )所涉及的术语和定义、原理、试剂与材料、仪器设备、样品要求、样品要求、分析步骤、结果计算、允许偏差。 本标准适用于纯度不高于99.99999%的硅材料中的杂质元素L i、Be、B、N a、M g、A 1、P、K、T h、U等元素的测定

Determination of Impurity Element Content in Silicon Materials by Glow Discharge Mass Spectrometry

KS D 0267-2011 硅中硼含量的估算

Estimation of Boron Content in Silicon

DIN 50451-5:2010 半导体工艺用材料测试.液体中痕量元素测定.第5部分:在每千克微克和每千克豪微克范围之内的痕量元素测定用样品和样品制备装置的材料选择及其适用性试验指南

This document gives a guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation used for the determination of trace elements in high-purity chemical products for semiconductor technology. It is applicable for determinations of trace elements in ranges of micrograms per kilogram and nanograms per kilogram.

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of t

YS/T 724-2009 硅粉

本标准规定硅粉的要求、试验方法、检验规则、标志、包装、运输、贮存、订货单(合同)内容等。 本标准适用于在矿热炉内用碳质还原剂与硅石熔炼所生成的工业硅破碎分筛加工成的硅粉，主要用于生产多晶硅的原料。

Metallurgical silicon powder

SJ/T 11396-2009 氮化镓基发光二极管蓝宝石衬底片

本标准规定了外延氮化镓的高纯蓝宝石单晶抛光衬底片的技术要求、测试方法、检验检测、标志、包装运输和贮存等内容。 本标准适用于制备半导体发光二极管的外延氮化镓的高纯蓝宝石单晶抛光衬底片。

The sapphire substrates for nitride based light-emitting diode

DIN 50455-1:2009 半导体技术用材料的试验.表征光阻剂方法.第1部分:涂层厚度的光学法测定

Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods

DIN 50452-2:2009 半导体技术用材料的试验.液体中粒子分析的试验方法.第2部分:利用光学粒子计数器测定粒子

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters

KS D 0078-2008(2018) 用于测定杂质浓度的硅晶体通过光致发光光谱的测试方法

Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

YS/T 679-2008 非本征半导体中少数载流子扩散长度的稳态表面光电压测试方法

1.1 本标准适用于非本征单晶半导体材料样品或相同导电类型重掺衬底上沉积已知电阻率的同质外延层中的少数载流子扩散长度的测量。要求样品或外延层厚度大于 4 倍的扩散长度。 1.2 本标准是为单晶硅样品的应用而开发的，可用于测量其他半导体，如砷化镓（同时调整相应的光照波长（能量）范围和样品的制备工艺）上的有效扩散长度和评价晶粒间界垂直于表面的多晶硅样品上有效扩散长度。本标准也可用于硅片的洁净区的宽度测定。 1.3 本标准对样品的电阻率和寿命的应用极限尚未确定，但已经成功的对电阻率（0.l～50）Ω·cm 、载流子寿命短至 2ns 的 p 和 n 型硅样品进行了测量。本标准测量的扩散长度仅在室温22℃±0.5℃下进行，寿命和扩散长度是温度的函数。

Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage

ASTM F76-08(2016) 测量电阻率和霍尔系数和测定单晶半导体中霍尔迁移率的标准试验方法

4.1 In order to choose the proper material for producing semiconductor devices, knowledge of material properties such as resistivity, Hall coefficient, and Hall mobility is useful. Under certain conditions, as outlined in the Appendix, other useful quantities for materials specification, including the charge carrier density and the drift mobility, can be inferred. 1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements. 1.1.1 Test Method A, van der Pauw (1)8201;2—This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier. 1.1.2 Test Method B, Parallelepiped or Bridge-Type—This test method requires a specimen homogeneous in thickness and of specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier. 1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given. Note 1: Practice F418 covers the preparation of gallium arsenide phosphide specimens. 1.3 The method in Practice F418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user. 1.4 Interlaboratory tests of 8201;these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity.

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors