L40 半导体分立器件综合 标准查询与下载

JIS C 6790:2016 螺栓夹紧式朗之万(Langevin)振动器使用功率表法的负荷试验

Load test of a bolt-clamped Langevin vibrator using wattmeter method

SJ/T 11586-2016 半导体器件10KeV低能X射线总剂量辐照试验方法

Test method for 10KeV low-energy X-ray total dose irradiation of semiconductor devices

IEC 62047-26:2016 半导体器件. 微型机电装置. 第26部分: 微槽和针孔结构的描述和测量方法

This part of IEC 62047 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

IEC 62047-1:2016 半导体装置.微型机电装置.第1部分:术语和定义

This part of IEC 62047 defines terms for micro-electromechanical devices including the process of production of such devices.

Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions

JIS C 5630-20:2015 半导体器件. 微型机电装置. 第20部分: 陀螺仪

Semiconductor devices -- Micro-electromechanical devices -- Part 20: Gyroscopes

IEC/IEEE 62659:2015 纳米制造. 纳米电子学的大规模生产

Nanomanufacturing - Large scale manufacturing for nanoelectronics

BS EN 62047-16:2015 半导体器件. 微型机电装置. 用于测定MEMS薄膜晶片曲率剩余应力的试验方法和悬臂梁挠度法

Semiconductor devices. Micro-electromechanical devices. Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection methods

BS EN 62047-17:2015 半导体器件. 微型机电装置. 用于测量薄膜力学性能的胀形试验方法

Semiconductor devices. Micro-electromechanical devices. Bulge test method for measuring mechanical properties of thin films

BS EN 62047-15:2015 半导体器件. 微型机电装置. PDMS和玻璃之间的粘结强度的试验方法

Semiconductor devices. Micro-electromechanical devices. Test method of bonding strength between PDMS and glass

BS PD CLC/TR 62258-4:2013 半导体芯片产品. 对芯片用户和供应商的问卷调查

Semiconductor die products. Questionnaire for die users and suppliers

BS EN 62047-22:2014 半导体器件. 微型机电装置. 柔性基板上导电薄膜机电拉伸试验方法

Semiconductor devices. Micro-electromechanical devices. Electromechanical tensile test method for conductive thin films on flexible substrates

BS EN 60749-42:2014 半导体器件. 机械和气候试验方法. 温度和湿度存储

Semiconductor devices. Mechanical and climatic test methods. Temperature and humidity storage

BS EN 62047-21:2014 半导体器件. 微型机电装置. 薄膜MEMS材料泊松比试验方法

Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials

BS EN 62047-20:2014 半导体器件. 微型机电装置. 陀螺仪

Semiconductor devices. Micro-electromechanical devices. Gyroscopes

DIN EN 60749-26:2014 半导体器件.机械和气候试验方法.第26部分:静电放电(ESD)灵敏度试验.人体模型(HBM)(IEC 60749-26-2013).德文版本EN 60749-26-2014

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (IEC 60749-26:2013); German version EN 60749-26:2014

BS IEC 62860-1:2013 基于有机晶体管的环形振荡器特性的试验方法

Test methods for the characterization of organic transistor-based ring oscillators

BS IEC 62860:2013 有机晶体管和材料特性的试验方法

Test methods for the characterization of organic transistors and materials

NF C96-013-4*NF EN 60191-4:2014 半导体装置的机械标准化.第4部分:半导体装置封装外部形状的分类和编码系统

Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages

BS EN 60749-26:2014 半导体器件.机械和气候试验方法.静电放电(ESD)灵敏度测试.人体模型(HBM)

Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Human body model (HBM)

IEC 62047-21:2014 半导体器件. 微型机电装置. 第21部分: 薄膜MEMS材料泊松比试验方法

This part of IEC 62047 specifies the determination of Poisson's ratio from the test results obtained by the application of uniaxial and biaxial loads to thin-film micro-electromechanical systems (MEMS) materials with lengths and widths less than 10 mm and thicknesses less than 10 ??.

Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials