L40 半导体分立器件综合 标准查询与下载
共找到 1197 条与 半导体分立器件综合 相关的标准，共 80 页
Semiconductor devices. Discrete devices. Magnetic and capacitive coupler for basic and reinforced isolation
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2011-12-31
- 实施
- 2011-12-31
Electrically isolated semiconductor devices
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2011-12-29
- 实施
Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing (IEC 60749-30:2005 + A1:2011); German version EN 60749-30:2005 + A1:2011
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2011-12
- 实施
- 2011-12-01
Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films (IEC 62047-8:2011); German version EN 62047-8:2011
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2011-12
- 实施
- 2011-12-01
Semiconductor die products - Part 2: Exchange data formats (IEC 62258-2:2011); English version EN 62258-2:2011
- ICS
- 31.080.01;35.040
- CCS
- L40
- 发布
- 2011-12
- 实施
- 2011-12-01
Mechanical standardization of semiconductor devices - Part 6-12: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guidelines for fine-pitch land grid array (FLGA) (IEC 60191-6-12:2011); German
- ICS
- 01.100.25;31.240
- CCS
- L40
- 发布
- 2011-12
- 实施
- 2011-12-01
Semiconductor devices. Micro-electromechanical devices. Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2011-11-30
- 实施
- 2011-11-30
Nanotechnologies - Characterization of multiwall carbon nanotubes - Mesoscopic shape factors
- ICS
- 07.030
- CCS
- L40
- 发布
- 2011-11
- 实施
Nanotechnologies - Determination of elemental impurities in samples of carbon nanotubes using inductively coupled plasma mass spectrometry
- ICS
- 07.030
- CCS
- L40
- 发布
- 2011-11
- 实施
Nanotechnologies - Characterization of single-wall carbon nanotubes using thermogravimetric analysis
- ICS
- 07.030
- CCS
- L40
- 发布
- 2011-11
- 实施
Mechanical standardization of semiconductor devices - Part 2: Dimensions
- ICS
- 31.080.01;31.240
- CCS
- L40
- 发布
- 2011-11
- 实施
- 2011-11-26
Semiconductor devices - Discrete devices - Part 17: Magnetic and capacitive coupler for basic and reinforced isolation
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2011-11
- 实施
Semiconductor devices - Micro-electromechanical devices - Part 8 : strip bending test method for tensile property measurement of thin films.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2011-10-01
- 实施
- 2011-10-07
Semiconductor devices. Mechanical and climatic test methods. Internal moisture content measurement and the analysis of other residual gases
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2011-09-30
- 实施
- 2011-09-30
Semiconductor devices. Micro-electromechanical devices. Micro-pillar compression test for MEMS materials
- ICS
- 31.220.01
- CCS
- L40
- 发布
- 2011-09-30
- 实施
- 2011-09-30
Semiconductor devices. Micro-electromechanical devices. RF MEMS switches
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2011-09-30
- 实施
- 2011-09-30
Semiconductor devices. Mechanical and climatic test methods. Board level drop test method using a strain gauge
- ICS
- 31.080.01
- CCS
- L40
- 发布
- 2011-09-30
- 实施
- 2011-09-30
Semiconductor devices - Micro-electromechanical devices - Part 4 : generic specifications for MEMS.
- ICS
- 31.080.01;31.220.01
- CCS
- L40
- 发布
- 2011-09-01
- 实施
- 2011-09-10
This part of IEC 62047 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 ?? to 1 000 ?? in the plane direction and from 1 ?? to 100 ?? in thickness@ and test materials measuring under 1 mm in length@ under 1 mm in width@ and between 0@1 ?? and 10 ?? in thickness. The main structural materials for MEMS@ micromachine@ etc. have special features@ such as typical dimensions of a few microns@ material fabrication by deposition@ and test piece fabrication by means of non-mechanical machining@ including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures@ a fatigue testing method with ultra high cycles (up to 1012) loadings needs to be established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration.
Semiconductor devices - Microelectromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
- ICS
- 31.080.01;31.080.99;31.220.01
- CCS
- L40
- 发布
- 2011-09
- 实施
- 2011-09-15
Nanotechnologies - Characterization of single-wall carbon nanotubes using ultraviolet-visible-near infrared (UV-Vis-NIR) absorption spectroscopy
- ICS
- 07.030
- CCS
- L40
- 发布
- 2011-09
- 实施
