DS/EN 60749-38-2008

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory

DS/EN 60749-38-2008 发布历史

This part of IEC 60749 establishes a procedure for measuring the data retention capability of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method

DS/EN 60749-38-2008由丹麦标准化协会 DK-DS 发布于 2008-08-13，并于 2008-08-13 实施。

DS/EN 60749-38-2008在国际标准分类中归属于: 31.080.01 半导体器分立件综合。

DS/EN 60749-38-2008的历代版本如下：

• 2008年08月13日 DS/EN 60749-38-2008

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标准号

DS/EN 60749-38-2008

发布日期

2008年08月13日

实施日期

2008年08月13日

废止日期

无

国际标准分类号

31.080.01

发布单位

DK-DS

适用范围

This part of IEC 60749 establishes a procedure for measuring the data retention capability of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method

DS/EN 60749-38-2008系列标准